Semiconductor memory device having an electrically floating body transistor
An IC may include an array of memory cells formed in a semiconductor, including memory cells arranged in rows and columns, each memory cell may include a floating body region defining at least a portion of a surface of the memory cell, the floating body region having a first conductivity type; a buried region located within the memory cell and located adjacent to the floating body region, wherein the buried region has a second conductivity type, wherein the floating body region is bounded on a first side by a first insulating region having a first thickness and on a second side by a second insulating region having a second thickness, and a gate region above the floating body region and the second insulating region and is insulated from the floating body region by an insulating layer; and control circuitry configured to provide electrical signals to said buried region.
1. An array of memory cells formed in a semiconductor, the array comprising:
a plurality of semiconductor memory cells arranged in a matrix of rows and a plurality of columns wherein the rows of memory cells define a first direction and the columns of memory cells define a second direction, and each of said memory cells comprising:
a bipolar device having a floating base region, a first region, a second region, and a gate region wherein: a state of said semiconductor memory cell is stored in said floating base region; said first region is located at a surface of said floating base region; said second region is located below said floating base region, said second region is commonly connected to at least two of said semiconductor memory cells in said matrix; and
said gate region overlays two of said semiconductor memory cells along the column direction,
wherein said bipolar device is activated by electrical signals provided to said second region when the memory cell is in one of said first and second states, and
wherein said bipolar device is not activated by electrical signals provided to said second region when the memory cell is in the other of said first and second states.
2. The array of semiconductor memory cells of claim 1 , further comprising a plurality of source lines crossing the array in a first direction beneath said surface, wherein the plurality of source lines are coupled to said second regions.
3. The array of semiconductor memory cells of claim 1 , further comprising a plurality of bit lines crossing the array in a second direction substantially orthogonal to the first direction, wherein the plurality of bit lines are coupled at said surface to said first regions.
4. The array of semiconductor memory cells of claim 1 , further comprising a plurality of word lines crossing the array in a first direction above said surface, wherein the plurality of word lines are coupled to said gate regions.
5. The array of semiconductor memory cells of claim 1 , further comprising a first well region of a first conductivity type beneath a buried region.
6. The array of semiconductor memory cells of claim 1 , wherein each of said second regions is adapted to receive electrical signals of different amplitude or polarity, wherein the electrical signals depend on an operation of each of said memory cells.
7. The array of semiconductor memory cells of claim 6 , wherein said electrical signal applied to said second region comprises a pulse.
8. The array of semiconductor memory cells of claim 6 , wherein said electrical signal applied to said second region comprises a constant amplitude level.
9. The array of semiconductor memory cells of claim 1 , wherein said array is formed in a fin structure fabricated on said semiconductor.
10. An integrated circuit comprising:
an array of memory cells formed in a semiconductor, the array comprising:
a plurality of memory cells arranged in a plurality of rows and a plurality of columns, each memory cell of the plurality of memory cells comprising:
a bipolar device having a floating base region, a first region, a second region, and a gate region wherein: a state of said semiconductor memory cell is stored in said floating base region, said floating base region having a surface;
said first region is located at the surface of said floating base region;
said second region is located below said floating base region, said second region is commonly connected to at least two of said semiconductor memory cells in said matrix; and
said gate region overlays two of said semiconductor memory cells along the column direction, and a first control circuitry configured to provide electrical signals to said second region,
wherein said bipolar device is activated by said electrical signals provided to said second region when the memory cell is in one of said first and second states, and
wherein said bipolar device is not activated by said electrical signals provided to said second region when the memory cell is in the other of said first and second states.
11. The integrated circuit of claim 10 , further comprising a plurality of source lines crossing the array in a first direction beneath one or more surfaces of said plurality of semiconductor memory cells, wherein the plurality of source lines are coupled to one or more second regions of said plurality of semiconductor memory cells.
12. The integrated circuit of claim 11 , further comprising a plurality of bit lines crossing the array in a second direction substantially orthogonal to the first direction, wherein the plurality of bit lines are coupled to one or more said first regions.
13. The integrated circuit of claim 10 , further comprising a plurality of word lines crossing the array in a first direction above one or more surfaces, wherein the plurality of word lines are coupled to one or more gate regions.
14. The integrated circuit of claim 10 , further comprising second control circuitry configured to provide electrical signals to said first region.
15. The integrated circuit of claim 10 , wherein said electrical signals to said second region have an amplitude or polarity dependent on an operation of said array of memory cells.
16. The integrated circuit of claim 10 , wherein said first control circuitry comprises a voltage generator circuit.
17. The integrated circuit of claim 16 , further comprising a multiplexer electrically connected between said voltage generator circuit and said second region, said multiplexer configured to apply periodic pulses of positive voltage to said second region.
18. The integrated circuit of claim 10 , wherein said first control circuitry comprises a reference generator circuit configured to sense potential of said floating base region.
19. The integrated circuit of claim 14 , wherein said second control circuitry comprises a read circuit connected to said first region and configured to read a state of said semiconductor memory cell.
20. The integrated circuit of claim 19 , further comprising a reference generator circuit connected to said read circuit.