High current density, low contact resistance wide bandgap contacts
A high current density, low contact resistance contact for wide bandgap (WBG) or ultra-wide bandgap materials (UWBG) is disclosed. The contact is lithographically formed so that a total perimeter length of the contact structure is at least twice the length of the side of a contact pad closest to the gate in a high electron mobility transistor (HEMT). The contact structure may take the form of a plurality of columns having various cross-sectional shapes, or may take the form of a convoluted geometrical shape, such as a comb-like, serpentine, or spiral shape. The depth of the contact structure permits direct contact with the two-dimensional electron gas (2DEG) in the HEMT by the perimeter of the contact structure. The contact structure is formed of at least one metal layer, at least one doped material regrown layer, or at least one implanted region. The contact structure may be applied to other WBG and UWBG devices.
1. A semiconductor device comprising:
a semiconductor material layer;
a high perimeter length contact formed in a top surface of the semiconductor material layer;
a contact pad formed on a top surface of the high perimeter length contact and a first portion of the top surface of the semiconductor material layer, the contact pad electrically connected to the high perimeter length contact; and
a gate electrode formed on a second portion of the top surface of the semiconductor material layer, the second portion of the top surface of the semiconductor material layer different than the first portion of the top surface of the semiconductor material layer, the gate electrode being adjacent the contact pad;
wherein a total perimeter length of the high perimeter length contact is at least 2 times greater than a length of a side of the contact pad closest to the gate electrode.
2. The semiconductor device of claim 1 , wherein the high perimeter length contact includes a plurality of columns, each of the plurality of columns having one of a circular cross-sectional shape, a polygonal cross-sectional shape, and a multi-pointed star cross-sectional shape.
3. The semiconductor device of claim 1 , wherein the high perimeter length contact includes a plurality of columns, the plurality of columns having an offset row packing configuration or a square packing configuration.
4. The semiconductor device of claim 1 , wherein the high perimeter length contact includes a plurality of columns, the total perimeter length of the high perimeter length contact being at least 4 times greater than the length of the side of the contact pad closest to the gate electrode.
5. The semiconductor device of claim 1 , wherein the high perimeter length contact includes a convoluted geometrical shape contact, the convoluted geometrical shape contact having one of a comb-like cross-section, a serpentine cross-section, and a spiral cross-section, the total perimeter length of the convoluted geometrical shape contact being at least 5 times greater than the length of the side of the contact pad closest to the gate electrode.
6. The semiconductor device of claim 5 , wherein the total perimeter length of the convoluted geometrical shape contact is at least 10 times greater than the length of the side of the contact pad closest to the gate electrode.
7. The semiconductor device of claim 1 , wherein a sidewall of the high perimeter length contact is one of vertical, substantially vertical, and a positive slope.
8. The semiconductor device of claim 1 , wherein the gate electrode is a rectangle or a ring.
9. The semiconductor device of claim 1 , wherein the contact pad is one of a rectangle, a circle, and a ring.
10. The semiconductor device of claim 1 , wherein the semiconductor material layer includes:
a barrier layer; and
a channel layer, the channel layer on a side of the barrier layer opposite the top surface of the semiconductor material layer.
11. The semiconductor device of claim 10 , wherein the semiconductor material layer further includes one or more of a spacer layer between the barrier layer and the channel layer and a cap layer on the barrier layer.
12. The semiconductor device of claim 10 , wherein a thickness of the high perimeter length contact is substantially equal to or greater than a thickness of the barrier layer.
13. The semiconductor device of claim 1 , wherein the high perimeter length contact comprises one of at least one metal layer, at least one doped material regrown layer, and at least one implanted region.
14. The semiconductor device of claim 1 , wherein the high perimeter length contact and the contact pad comprise the same material.
15. The semiconductor device of claim 1 , wherein the semiconductor material layer comprises a wide bandgap semiconductor material or an ultra-wide bandgap material.
16. A semiconductor device comprising:
a semiconductor material layer;
a high perimeter length contact formed in a top surface of the semiconductor material layer; and
a contact pad formed on a top surface of the high perimeter length contact and a portion of the top surface of the semiconductor material layer, the contact pad electrically connected to the high perimeter length contact;
wherein a total perimeter length of the high perimeter length contact is at least 1.5 times greater than a total perimeter length of the contact pad.
17. The semiconductor device of claim 16 , wherein the high perimeter length contact includes a plurality of columns, each of the plurality of columns having one of a circular cross-sectional shape, a polygonal cross-sectional shape, and a multi-pointed star cross-sectional shape.
18. The semiconductor device of claim 16 , wherein the high perimeter length contact includes a plurality of columns, the plurality of columns having an offset row packing configuration or a square packing configuration.
19. The semiconductor device of claim 16 , wherein the high perimeter length contact includes a convoluted geometrical shape contact, the convoluted geometrical shape contact having one of a comb-like cross-section, a serpentine cross-section, and a spiral cross-section, the total perimeter length of the convoluted geometrical shape contact being at least 3 times greater than the total perimeter length of the contact pad.
20. The semiconductor device of claim 16 , wherein the high perimeter length contact comprises one of at least one metal layer, at least one doped material regrown layer, and at least one implanted region.