Semiconductor device and manufacturing method thereof
A semiconductor device includes a stack structure including conductive layers and insulating layers, which are alternately stacked; an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
1. A semiconductor device comprising:
a stack structure including conductive layers and insulating layers, which are alternately stacked;
an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and
a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
2. The semiconductor device of claim 1 , wherein the channel regions are located at levels corresponding to the conductive layers, and the impurity regions are located at levels corresponding to the insulating layers.
3. The semiconductor device of claim 1 , wherein the channel regions and the impurity regions are alternately arranged.
4. The semiconductor device of claim 1 , wherein the impurity regions have conductivity.
5. The semiconductor device of claim 1 , further comprising:
barrier patterns formed in the channel regions; and
a gap fill layer formed in the channel layer.
6. The semiconductor device of claim 5 , wherein an interface between the barrier patterns and the gap fill layer is located on the same plane as that between the channel regions and the impurity regions.
7. The semiconductor device of claim 5 , wherein an interface between the barrier patterns and the gap fill layer is located closer to the first opening than that between the channel regions and the impurity regions.
8. The semiconductor device of claim 5 , wherein the barrier patterns include a material having a higher etch selectivity different from the channel layer.
9. The semiconductor device of claim 5 , wherein the barrier patterns include oxide, nitride or metal.
10. The semiconductor device of claim 1 , wherein the impurity regions have a thickness that is less than that of the channel regions.
11. The semiconductor device of claim 1 , wherein the impurity regions have surfaces rougher than those of the channel regions.
12. A semiconductor device comprising:
a stack structure including conductive layers and insulating layers, which are alternately stacked;
an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and
a channel layer including first regions located in the second openings and second regions located in the first opening, wherein the second regions have a greater electrical conductivity than that of the first regions.
13. The semiconductor device of claim 12 , wherein the first regions are located at levels corresponding to the conductive layers, and the second regions are located at levels corresponding to the insulating layers.
14. The semiconductor device of claim 12 , further comprising barrier patterns formed in the first regions.
15. The semiconductor device of claim 14 , wherein the barrier patterns include a material having a higher etch selectivity different from the channel layer.
16. The semiconductor device of claim 14 , wherein the barrier patterns include oxide, nitride or metal.
17. A semiconductor device comprising:
a stack structure;
a gap fill layer including a penetration part penetrating the stack structure and protrusion parts protruding from a sidewall of the penetration part; and
a channel layer including channel regions respectively surrounding the protrusion parts and impurity regions surrounding the penetration part, the impurity regions having an impurity concentration higher than that of the channel regions.
18. The semiconductor device of claim 17 , wherein the stack structure includes conductive layers and insulating layers, which are alternately stacked, and the protrusion parts are located at levels corresponding to the conductive layers.
19. The semiconductor device of claim 17 , further comprising barrier patterns interposed between the channel regions and the protrusion parts.
20. The semiconductor device of claim 19 , wherein the barrier patterns include oxide, nitride or metal.