Light-emitting diode (LED) device
A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.
1. A light-emitting diode (LED) device comprising:
a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;
a plurality of electrode layers on first surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;
a separation layer configured to isolate the plurality of light-emitting structures from each other;
a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structure, the quantum dots including a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell, the core having a diameter between 1 nm and 30 nm, the shell having a thickness between 0.1 nm and 20 nm; and
a partition layer which is a growth substrate for growing the light-emitting structures between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.
2. The LED device of claim 1 , wherein
the core includes CdSe or InP, and
the shell includes ZnS or ZnSe.
3. The LED device of claim 1 , wherein the core has a diameter between 3 nm and 10 nm.
4. The LED device of claim 1 , wherein the shell has a thickness between 0.5 nm and 2 nm.
5. The LED device of claim 1 , wherein the wavelength transformers include quantum dots mixed with phosphor.
6. The LED device of claim 1 , further comprising:
a reflective layer between an electrode layer, of the plurality of electrode layers, and a light-emitting structure, of the plurality of light-emitting structures.
7. The LED device of claim 1 , further comprising:
an uneven structure on a surface of a light-emitting structure, of the plurality of light-emitting structures.
8. The LED device of claim 1 , wherein the partition layer includes one or more sidewalls associated with a slope, such that the one or more sidewalls define a space having a distal end and proximate end in relation to at least one light-emitting structure of the plurality of light-emitting structures, the distal end having a greater diameter than the proximate end.
9. The LED device of claim 1 , wherein the partition layer includes a single body structure.
10. A light-emitting diode (LED) device, comprising:
a plurality of light-emitting cells spaced apart from each other;
a separation layer configured to isolate the light-emitting cells from each other;
a plurality of wavelength transformers including quantum dots associated with separate, respective light-emitting cells of the plurality of light-emitting cells, the quantum dots including a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell, the core having a diameter between 1 nm and 30 nm, the shell having a thickness between 0.1 nm and 20 nm; and
a partition layer which is a silicon-based structure between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.
11. The LED device of claim 10 , wherein
the core includes CdSe or InP, and
the shell includes ZnS or ZnSe.
12. The LED device of claim 10 , wherein the core has a diameter between 3 nm and 10 nm.
13. The LED device of claim 10 , wherein the shell has a thickness between 0.5 nm and 2 nm.
14. The LED device of claim 10 , wherein the wavelength transformers include quantum dots mixed with phosphor.
15. A light-emitting diode (LED) device, comprising:
a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface, a second surface and side surfaces extending between the first surface and the second surface;
a plurality of electrode layers on first surfaces of respective light-emitting structures of the plurality of light-emitting structures;
a separation layer configured to isolate the plurality of light-emitting structures from each other, the separation layer disposed on the side surfaces and the second surface, and between the electrode layers of respective light-emitting structures of the plurality of light-emitting structures;
a plurality of wavelength transformers including quantum dots on second surfaces of respective light-emitting structures of the plurality of light-emitting structures, the quantum dots including a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell, the core having a diameter from about 1 nm to about 30 nm, the shell having a thickness from about 0.1 nm to about 20 nm; and
a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other, wherein the partition layer includes at least one of a substrate structure, an insulation structure, and a light reflecting structure.