IP Library › Granted Patent US 10,825,912

Granted Patent B2

US 10,825,912 · App. 16/178,495 · Granted Nov 3, 2020

Integrated epitaxial metal electrodes

Inventors: Rodney Pelzel (Emmaus, PA); Andrew Clark (Mountain View, CA); Rytis Dargis (Oak Ridge, NC); Patrick Chin (Zhubei, TW); Michael Lebby (San Francisco, CA)

Assignee: IQE plc

H01L29/511 H01L21/0242 H01L21/02123 H01L21/02178 H01L21/02293 H01L21/02381 H01L21/02414 H01L21/02433 H01L21/02483 H01L21/02488 H01L21/02491 H01L21/02502 H01L21/02505 H01L21/02521 H01L29/517

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Quick Facts

Patent No.: US 10,825,912
App. No.: 16/178,495
Granted: Nov 3, 2020
Kind: B2

External Links

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Abstract

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

Claims (65)

1. A layered structure, comprising:

a substrate;

a first rare earth oxide layer over the substrate;

a first metal layer over the first rare earth oxide layer;

a semiconductor layer including a first semiconductor sublayer over the first metal layer and a second semiconductor sublayer over the first semiconductor sublayer; and

an interlayer between the first metal layer and the semiconductor layer, configured for transition from metal to semiconductor.

2. The layered structure of claim 1 , wherein the substrate is a silicon-on-insulator wafer.

3. The layered structure of claim 2 , further comprising:

a second metal layer over the first metal layer.

4. The layered structure of claim 3 , further comprising:

a second rare earth oxide layer over the second metal layer, wherein the semiconductor layer is over the second rare earth oxide layer.

5. The layered structure of claim 2 , wherein the first metal layer includes at least a first portion of a first metal element and a second portion of a second metal element.

6. The layered structure of claim 2 , wherein the second metal layer includes at least a first portion of a first metal element and a second portion of a second metal element.

7. The layered structure of claim 2 , further comprising:

a second metal layer over the semiconductor layer.

8. The layered structure of claim 7 , further comprising:

a second rare earth oxide layer over the second metal layer.

9. The layered structure of claim 2 , wherein the first metal layer has a non-continuous pattern with a first gap space between a first part of the first metal layer and a second part of the first metal layer.

10. The layered structure of claim 9 , wherein the first part of the first metal layer is composed of a first metal element, and the second part of the first metal layer is composed of a second metal element.

11. The layered structure of claim 9 , wherein the first sublayer of the semiconductor layer has a non-continuous pattern, and wherein the first sublayer of the semiconductor layer has a first portion and a second portion being separated by the first part of the first metal layer.

12. The layered structure of claim 11 , further comprising:

a metal sulfide portion over the first part of the first metal layer; and

a metal oxide portion over the second part of the first metal layer.

13. The layered structure of 11 , wherein the second sublayer of the semiconductor layer spans over at least the first part of the first metal layer, the second part of the first metal layer, and the first portion of the first sublayer of the semiconductor layer that is within the gap space between the first part and the second part of the first metal layer.

14. The layered structure of claim 13 , wherein the first sublayer of the semiconductor layer extends beyond the gap space to cover the first part and the second part of the first metal layer such that the first part and the second part of the first metal layer are not in contact with the second sublayer of the semiconductor layer.

15. The layered structure of claim 13 , further comprising:

a second metal layer over the second sublayer of the semiconductor layer, wherein the second metal layer has a non-continuous pattern including at least a first portion of the second metal layer that does not align with the first part or the second part of the first metal layer.

16. The layered structure of claim 11 , wherein the second semiconductor sublayer has a non-continuous pattern that has at least a first part of the second semiconductor sublayer is over the first portion of the first semiconductor sublayer that is within the gap space between the first part and the second part of the first metal layer, and wherein the at least first part of the second semiconductor sublayer does not align with the first part or the second part of the first metal layer.

17. The layered structure of claim 16 , wherein the first sublayer of the semiconductor layer extends from the gap space to cover the first part and the second part of the first metal layer.

18. The layered structure of claim 17 , further comprising:

19. The layered structure of claim 2 , wherein a thickness of the first rare earth oxide layer is greater than 0 nm and at most equal to 500 nm.

20. The layered structure of claim 1 , further comprising:

a second metal layer over the first metal layer.

21. The layered structure of claim 20 , wherein the second metal layer includes at least a first portion of a first metal element and a second portion of a second metal element.

22. The layered structure of claim 20 , further comprising:

a second rare earth oxide layer over the second metal layer, wherein the semiconductor layer is over the second rare earth oxide layer.

23. The layered structure of claim 1 , wherein the first metal layer includes at least a first portion of a first metal element and a second portion of a second metal element.

24. The layered structure of claim 1 , further comprising:

a second metal layer over the semiconductor layer.

25. The layered structure of claim 24 , further comprising:

a second rare earth oxide layer over the second metal layer.

26. The layered structure of claim 1 , wherein a thickness of the first rare earth oxide layer is greater than 0 nm and at most equal to 500 nm.

27. A layered structure, comprising:

a substrate;

a first rare earth oxide layer over the substrate;

a first metal layer over the first rare earth oxide layer, wherein the first metal layer has a non-continuous pattern with a first gap space between a first part of the first metal layer and a second part of the first metal layer; and

a semiconductor layer including a first semiconductor sublayer over the first metal layer and a second semiconductor sublayer over the first semiconductor sublayer.

28. The layered structure of claim 27 , wherein the first part of the first metal layer is composed of a first metal element, and the second part of the first metal layer is composed of a second metal element.

29. The layered structure of claim 27 , wherein the first sublayer of the semiconductor layer has a non-continuous pattern, and wherein the first sublayer of the semiconductor layer has a first portion and a second portion being separated by the first part of the first metal layer.

30. The layered structure of claim 29 , further comprising:

a metal sulfide portion over the first part of the first metal layer; and

a metal oxide portion over the second part of the first metal layer.

31. The layered structure of claim 29 , wherein the second sublayer of the semiconductor layer spans over at least the first part of the first metal layer, the second part of the first metal layer, and the first portion of the first sublayer of the semiconductor layer that is within the gap space between the first part and the second part of the first metal layer.

32. The layered structure of claim 31 , wherein the first sublayer of the semiconductor layer extends beyond the gap space to cover the first part and the second part of the first metal layer such that the first part and the second part of the first metal layer are not in contact with the second sublayer of the semiconductor layer.

33. The layered structure of claim 31 , further comprising:

34. The layered structure of claim 29 , wherein the second semiconductor sublayer has a non-continuous pattern that has at least a first part of the second semiconductor sublayer is over the first portion of the first semiconductor sublayer that is within the gap space between the first part and the second part of the first metal layer, and wherein the at least first part of the second semiconductor sublayer does not align with the first part or the second part of the first metal layer.

35. The layered structure of claim 34 , wherein the first sublayer of the semiconductor layer extends from the gap space to cover the first part and the second part of the first metal layer.

36. The layered structure of claim 35 , further comprising:

37. The layered structure of claim 36 , wherein the second metal layer with the non-continuous pattern includes at least a second portion of the second metal layer over the first sublayer of the semiconductor layer, and wherein the at least second portion of the second metal layer aligns with the first part of the first metal layer.

38. The layered structure of claim 27 , further comprising:

an interlayer between the first metal layer and the semiconductor layer, configured for transition from metal to semiconductor.

39. The layered structure of claim 38 , wherein the second metal layer with the non-continuous pattern includes at least a second portion of the second metal layer over the first sublayer of the semiconductor layer, and wherein the at least second portion of the second metal layer aligns with the first part of the first metal layer.

Continuity (3)

Continuation 15712002 · Sep 21, 2017

Provisional Application 62398416 · Sep 22, 2016

Related Publication 20190074365A1 · Mar 7, 2019