Magnetoresistive stacks and methods therefor
A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard free energy of oxidation than iron.
1. A magnetoresistive stack, comprising:
a base region, wherein a material of the base re ion includes an iron boron alloy having boron concentration greater than or equal to 45 atomic percent;
a seed region formed on the base region;
a fixed magnetic region formed above the seed region;
an intermediate region formed above the fixed magnetic region; and
a free magnetic region formed above the intermediate region.
2. The magnetoresistive stack of claim 1 , wherein the material of the base region includes an amorphous alloy of iron and boron.
3. The magnetoresistive stack of claim 1 , wherein the material of the base region includes an iron boron ahoy having boron concentration greater than or equal to 50 atomic percent.
4. The magnetoresistive stack of claim 1 , wherein the material of the base region includes at least one of (a) a rare earth material, (b) aluminum, (c) titanium, (d) hafnium, (e) zirconium, or (f) an alloy of aluminum, titanium, hafnium, or zirconium.
5. The magnetoresistive stack of claim 1 , wherein the base region has a thickness of about 10-40 Å.
6. The magnetoresistive stack of claim 1 , wherein the base region has a thickness of about 20 Å.
7. The magnetoresistive stack of claim 1 , wherein the fixed magnetic region has a synthetic antiferromagnetic structure (SAF) and includes a reference region and a transition region, wherein the reference region is positioned between the transition region and the intermediate region, and wherein the reference region includes a ferromagnetic alloy of iron and boron.
8. The magnetoresistive stack of claim 1 , wherein the fixed magnetic region has a synthetic antiferromagnetic structure (SAF) and includes a reference region and a transition region, wherein the reference region is positioned between the transition region and the intermediate region, and wherein the reference region includes at least one of (a) a rare earth material, (b) aluminum, (c) titanium, (d) hafnium, (e) zirconium, or (f) an alloy of aluminum, titanium, hafnium, or zirconium.
9. The magnetoresistive stack of claim 1 , wherein the fixed magnetic region has a synthetic antiferromagnetic structure (SAF) and includes a reference region and a transition region, wherein the reference region is positioned between the transition region and the intermediate region, and wherein the transition region includes a non-ferromagnetic alloy of iron and boron.
10. The magnetoresistive stack of claim 1 , wherein the fixed magnetic region has a synthetic antiferromagnetic structure (SAF) and includes a reference region and a transition region, wherein (a) the reference region is positioned between the transition region and the intermediate region, (b) the transition region includes a non-ferromagnetic alloy of iron and boron and/or the reference region includes a ferromagnetic alloy of iron and boron, and (c) a thickness of the transition region is about 2-5 Å and a thickness of the reference region is about 7-10 Å.
11. The magnetoresistive stack to claim 1 , wherein the seed region includes an alloy of nickel and chromium.
12. A magnetoresistive stack, comprising:
a base region;
a seed region formed on the base region;
a fixed magnetic region formed above the seed region, wherein the fixed magnetic region has a synthetic antiferromagnetic structure (SAF) and includes a reference region and a transition region, wherein the transition region includes a non-ferromagnetic alloy of iron and boron;
an intermediate region formed above the fixed magnetic region, wherein the reference region is positioned between the transition region and the intermediate region; and
a free magnetic region formed above the intermediate region,
wherein at least one of the base region, the transition region, and the reference region includes a material having a lower standard free energy of oxidation than iron.
13. The magnetoresistive stack of claim 12 , wherein the base region includes an amorphous alloy of iron and boron having a boron concentration greater than or equal to about 45 atomic percent.
14. The magnetoresistive stack of claim 12 , wherein the base region includes at least one of (a) rare earth material, (b) aluminum, (c) titanium, (d) hafnium, (e) zirconium, or (f) an alloy of aluminum; titanium, hafnium; or zirconium.
15. The magnetoresistive stack of claim 12 , wherein the reference region includes a ferromagnetic alloy of iron and boron.
16. The magnetoresistive stack of claim 12 , wherein the reference region includes an alloy of iron and boron having a boron concentration less than or equal to about 30 atomic percent.
17. The magnetoresistive stack of claim 12 , wherein the reference region includes least one of (a) rare earth material, (b) aluminum, (c) titanium, (d) hafnium, (e) zirconium, or (f) an alloy of aluminum, titanium, hafnium, or zirconium.
18. The magnetoresistive stack of claim 12 , wherein the transition region includes an alloy of iron and boron having a boron concentration of about 30-50 atomic percent.