Stack type power module and method of manufacturing the same
A stack type power module includes: a power semiconductor having a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor, and a collector having a pad shape on another surface of the power semiconductor; an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a metal layer that has a lower surface with which the collector is in contact; and a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to the metal layer that has an upper surface with which each of the gate and the emitter is in contact.
1. A stack type power module, comprising:
a power semiconductor having:
a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor; and
a collector having a pad shape formed on another surface of the power semiconductor;
an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a lower metal layer that has a lower surface with which the collector is in contact;
a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to an upper metal layer that has an upper surface with which each of the gate and the emitter is in contact; and
a first lead frame and a second lead frame, which are connected to the upper metal layer, disposed on the upper surface of the lower substrate layer,
wherein the first lead frame receives a control signal delivered to the gate from outside, and the second lead frame receives an alternating current (AC) delivered to outside from the emitter, and
wherein the gate is directly connected to the first lead frame through the upper metal layer of the lower substrate layer.
2. The stack type power module of claim 1 ,
wherein each of the upper substrate layer and the lower substrate layer has a stacked structure of an upper metal layer, a ceramic layer, and a lower metal layer as a path for discharging heat generated in the power semiconductor to outside.
3. The stack type power module of claim 2 ,
wherein at least any one of the lower metal layer of the upper substrate layer or the upper metal layer of the lower substrate layer is electrically connected with the power semiconductor.
4. The stack type power module of claim 1 ,
wherein the power semiconductor is bonded to the upper surface of the lower substrate layer.
5. The stack type power module of claim 1 ,
wherein the power semiconductor performs an ON/OFF switching control through the gate, and converts a direct current (DC) inputted from the collector into an alternating current (AC) to output to the emitter.
6. The stack type power module of claim 1 ,
wherein an underfill insulating resin is filled in a space between a plurality of terminal pads of the gate and a space between terminal pads between the gate and the emitter.
7. The stack type power module of claim 1 ,
wherein the insulating resin is a thermosetting epoxy resin containing silica or silicon dioxide (SiO2) filler.
8. The stack type power module of claim 7 ,
wherein the filler of the insulating resin has a spherical shape and has a maximum diameter to be equal to or less than half of a narrowest width of a space between a plurality of terminal pads of the gate and a space between terminal pads between the gate and the emitter to be filled.
9. The stack type power module of claim 8 ,
wherein the filler has an content of 50 weight % or more, based on the total weight of the insulating resin, and a thermal expansion coefficient of 20 ppm/° C. or less.
10. The stack type power module of claim 1 , further comprising a molding portion, which includes an epoxy molding compound (EMC), for the power semiconductor, the upper substrate layer, the lower substrate layer, the first lead frame, and the second lead frame.