Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof
A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.
1. A depositing arrangement for evaporation of a material comprising an alkali metal or alkaline earth metal and for deposition of the material on a substrate disposed in a physical vapor deposition chamber, comprising:
a first chamber configured to liquefy the material, the first chamber having a non-reactive atmosphere, the non-reactive atmosphere preventing a reaction with the material;
a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured to control of the flow rate of the liquefied material through the valve and wherein the valve is configured to further provide the liquefied material;
an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone comprises a surface disposed within a plenum defined by inner walls of a vapor distribution showerhead, the surface being heated by a first heating unit disposed in the plenum and configured to provide thermal energy to the material at a temperature suitable for evaporating the material;
a second heating unit to heat the material to higher temperatures before providing the material in the evaporation zone; and
the vapor distribution showerhead comprising one or more outlets to direct the vaporized material towards the substrate.
2. The arrangement according to claim 1 , wherein the vapor distribution showerhead is a linear vapor distribution showerhead.
3. The arrangement according to claim 1 , further comprising:
a controller connected to the valve, wherein the controller is configured to control the valve for adjusting the deposition rate of the vapor on the substrate.
4. The arrangement according to claim 3 , wherein the controller is a proportional-integral-derivative controller, and wherein the controller comprises:
a signal input configured to receive a signal of a deposition rate monitor system.
5. The arrangement according to claim 1 , wherein the first chamber comprises:
a gas inlet configured for inlet of a protective gas in the first chamber, the arrangement further comprising a further valve configured to control the flow rate of the protective gas in the first chamber.
6. The arrangement according to claim 5 , wherein the first chamber further comprises a pressure gauge in communication with the further valve.
7. The arrangement according to claim 1 , wherein the material is metallic lithium.
8. The arrangement according to claim 1 , further comprising:
an enclosure for housing at least the first chamber and the valve, wherein the enclosure is configured for exchange of the first chamber under protective atmosphere.
9. A deposition apparatus for evaporation of a material comprising an alkali metal or alkaline earth metal and for deposition of the material on a substrate, the apparatus comprising:
a vacuum chamber for depositing the material on the substrate; and
a depositing arrangement for evaporation of a material comprising an alkali metal or alkaline earth metal and for deposition of the material on a substrate, comprising:
a first chamber configured to liquefy the material, the first chamber having a non-reactive atmosphere, the non-reactive atmosphere preventing a reaction with the material;
a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured to control the flow rate of the liquefied material through the valve, and wherein the valve is configured to further provide the liquefied material;
an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone comprises a surface disposed within a plenum defined by inner walls of a vapor distribution showerhead, the surface being heated by a first heating unit disposed in the plenum and configured to provide thermal energy to the material at a temperature suitable for evaporating the material;
a second heating unit to heat the material to higher temperatures before providing the material in the evaporation zone; and
the vapor distribution showerhead comprising one or more outlets to direct the vaporized material towards the substrate.
10. The arrangement according to claim 1 , wherein the surface has a surface contact area in the range of 1 cm 2 to 10 cm 2 .
11. The arrangement according to claim 1 , a deposition rate measurement device provided in the vacuum chamber, wherein the deposition rate measurement device feeds a controller which controls the valve and a flow rate through the valve.
12. The arrangement according to claim 9 , wherein the surface has a surface contact area in the range of 1 cm 2 to 10 cm 2 .
13. The arrangement according to claim 9 , a deposition rate measurement device provided in the vacuum chamber, wherein the deposition rate measurement device feeds a controller which controls the valve and a flow rate through the valve.