Display device and method of manufacturing the same
A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a substrate including a separation area and a plurality of pixel formed over the substrate. The separation area is formed between adjacent pixels, and a plurality of through holes are respectively defined by a plurality of surrounding inner surfaces of the separation area, and wherein each of the inner surfaces passes through the substrate. The display device also includes an encapsulation layer formed over the substrate and covering the inner surfaces of the separation area.
1. A method of manufacturing a display device, the method comprising: providing a substrate including a pixel area and a separation area;
forming a plurality of pixels in the pixel area, wherein the separation area is located between adjacent pixels;
forming a plurality of through holes respectively defined by a plurality of surrounding inner surfaces of the separation area, wherein each of the plurality of inner surfaces passes through the substrate, wherein the forming of each through hole of the plurality of through holes comprises forming at least one of the plurality of inner surfaces to have a slope or a step shape in a cross-sectional view; and
forming an encapsulation layer over the substrate so as to cover the plurality of inner surfaces of each of the plurality of through holes.
2. The method of claim 1 , wherein the forming of the plurality of pixels comprises:
forming a pixel electrode over the substrate;
forming an intermediate layer including an emission layer over the pixel electrode; and
forming an opposite electrode at least partially covering the intermediate layer and opposite to the pixel electrode.
3. The method of claim 2 , wherein the forming of the plurality of through holes comprises forming at least one of the plurality of surrounding inner surfaces to have a greater width adjacent to the opposite electrode than the substrate.
4. The method of claim 3 , further comprising forming a thin film transistor (TFT), including a semiconductor layer and gate, source and drain electrodes, over the substrate,
wherein the forming of the TFT comprises:
forming a gate insulating layer between the semiconductor layer and the gate electrode;
forming an interlayer insulating layer between the gate and source electrodes and between the gate and drain electrodes; and
forming a contact hole, through which the semiconductor layer is electrically connected to the source and drain electrodes, in the gate and interlayer insulating layers,
wherein the forming of the plurality of through holes comprises forming first to fourth through holes consecutively, and
wherein the forming of the contact hole and the forming of the first through hole are concurrently performed.
5. The method of claim 4 , further comprising forming a first insulating layer over the TFT, wherein the first insulating layer includes a hole exposing one of the source and drain electrodes of the TFT, and
wherein the forming of the first insulating layer and the forming of the second through hole are concurrently performed.
6. The method of claim 5 , further comprising forming a second insulating layer, including an opening that exposes a center portion of the pixel electrode, over the first insulating layer, wherein the forming of the second insulating layer and the forming of the third through hole are concurrently performed.
7. The method of claim 6 , wherein the forming of the fourth through hole comprises removing a portion of the substrate corresponding to the first through hole.
8. The method of claim 1 , wherein at least one of the through plurality of through holes is formed between four adjacent pixels.
9. A method of manufacturing a display device, the method comprising: providing a substrate including a pixel area and a separation area;
forming a plurality of pixels in the pixel area, wherein the separation area is located between adjacent pixels, wherein the forming of the plurality of pixels comprises:
forming a pixel electrode over the substrate;
forming an intermediate layer including an emission layer over the pixel electrode; and
forming an opposite electrode at least partially covering the intermediate layer and opposite to the pixel electrode;
forming a thin film transistor (TFT), including a semiconductor layer and gate, source and drain electrodes, over the substrate, wherein the forming of the TFT comprises:
forming a gate insulating layer between the semiconductor layer and the gate electrode;
forming an interlayer insulating layer between the gate and source electrodes and between the gate and drain electrodes; and
forming a contact hole, through which the semiconductor layer is electrically connected to the source and drain electrodes, in the gate and interlayer insulating layers;
forming a plurality of through holes respectively defined by a plurality of surrounding inner surfaces of the separation area, wherein each of the plurality of inner surfaces passes through the substrate, wherein the forming of the plurality of through holes comprises forming at least one of the plurality of surrounding inner surfaces to have a greater width adjacent to the opposite electrode than the substrate; and
forming an encapsulation layer over the substrate so as to cover the plurality of inner surfaces of each of the plurality of through holes,
wherein the forming of the plurality of through holes comprises forming first to fourth through holes consecutively, and
wherein the forming of the contact hole and the forming of the first through hole are concurrently performed.