Semiconductor device
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.
1. A semiconductor device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer comprises a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type;
a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer comprises a third dopant comprising a doping concentration higher than the doping concentration of the first dopant;
an active region between the first semiconductor layer and the second semiconductor layer;
a confinement layer between the active region and the second semiconductor layer; wherein the confinement layer comprises a fourth dopant comprising a doping concentration and a conductivity type different from the first conductivity type;
a first Al-containing layer between the confinement layer and the second semiconductor layer, wherein the first Al-containing layer comprises an energy gap greater than an energy gap of the second semiconductor layer and an energy gap of the confinement layer; and
an electron blocking structure between the second semiconductor layer and the third semiconductor layer;
wherein the electron blocking structure comprises an energy gap greater than the energy gap of the second semiconductor layer;
wherein the first Al-containing layer comprises a fifth dopant comprising a doping concentration, and the doping concentration of the fifth dopant of the first Al-containing layer is less than a doping concentration of the first dopant of the second semiconductor layer and is greater than the doping concentration of the fourth dopant of the confinement layer.
2. The semiconductor device according to claim 1 , wherein a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not more than 150 nm.
3. The semiconductor device according to claim 1 , wherein the second dopant comprises a doping concentration, and the doping concentration of the first dopant is greater than the doping concentration of the second dopant of the second semiconductor layer.
4. The semiconductor device according to claim 3 , wherein a ratio of the doping concentration of the first dopant to the doping concentration of the second dopant of the second semiconductor layer is not less than 10.
5. The semiconductor device according to claim 3 , wherein a ratio of the doping concentration of the first dopant to the doping concentration of the second dopant in the second semiconductor layer is not more than 200.
6. The semiconductor device according to claim 1 , wherein the electron blocking structure comprises a dopant comprising a doping concentration, and the doping concentration of the second dopant is less than the doping concentration of the dopant of the electron blocking structure.
7. The semiconductor device according to claim 1 , wherein the confinement layer further comprises a sixth dopant comprising a conductivity type same as the first conductivity type, and a doping concentration of the fourth dopant is less than a doping concentration of the six dopant.
8. The semiconductor device according to claim 1 , wherein the active region comprises a seventh dopant comprising a doping concentration, and the doping concentration of the seventh dopant of the active region is not less than the fourth doping concentration of the dopant of the confinement layer.
9. The semiconductor device according to claim 1 , wherein the first Al-containing layer has a thickness between 5 nm and 20 nm both inclusive.
10. The semiconductor device according to claim 1 , wherein the doping concentration of the first dopant of the second semiconductor layer is not less than 1×10 18 /cm 3 .
11. The semiconductor device according to claim 10 , wherein the second dopant of the second semiconductor layer has a doping concentration not less than 1×10 17 /cm 3 .
12. The semiconductor device according to claim 11 , wherein the doping concentration of the second dopant of the second semiconductor layer is not more than 5×10 18 /cm 3 .
13. The semiconductor device according to claim 1 , wherein the second semiconductor layer has a thickness between 5 nm and 30 nm both inclusive.
14. The semiconductor device according to claim 1 , further comprising a second Al-containing layer between the first semiconductor layer and the active region.
15. The semiconductor device according to claim 14 , wherein the second Al-containing layer comprises a dopant comprising a doping concentration, the second dopant comprises a doping concentration, and the doping concentration of the dopant of the second Al-containing layer is greater than the doping concentration of the second dopant of the second semiconductor layer.
16. The semiconductor device according to claim 15 , further comprising a stress releasing structure between the second Al-containing layer and the first semiconductor layer.
17. The semiconductor device according to claim 16 , wherein the stress releasing structure comprises a dopant comprising a doping concentration, the doping concentration of the dopant of the stress releasing structure is greater than the doping concentration of the dopant of the second Al-containing layer.