IP Library › Granted Patent US 10,720,853
Granted Patent B1
US 10,720,853 · App. 16/183,115 · Granted Jul 21, 2020

Integrated silicon carbide diode rectifier circuits

Inventors: Matthew Barlow (Springdale, AR); James A. Holmes (Fayetteville, AR)
H02M7/06H01L27/0605
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,720,853
App. No.
16/183,115
Granted
Jul 21, 2020
Kind
B1
Abstract

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.

Claims (3)

1. An integrated diode rectification circuit, comprising:

a single chip having a floating P-Substrate and an alternating current rectifier having an N-channel; and

an on chip isolation diode electrically connected from the N-channel to the P-Substrate.

Assignments (1)
CONFIRMATORY LICENSE Recorded Jul 11, 2024
From: OZARK INTEGRATED CIRCUITS, INC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 068335/0172 →
Continuity (1)
Provisional Application 62582752 · Nov 7, 2017