Adhesion promoters

1. A method for forming an adhesion promoter on a surface of a substrate, the method comprising:

preparing an adhesion promoter composition including at least one cyclic compound or at least one non-cyclic compound, the cyclic compound having a formula,

and the non-cyclic compound having a formula,

wherein:

R 1 and R 2 each independently represents a non-photoactive phenyl, a photoactive phenyl, or a C 1 -C 4 alkyl;

R 3 represents a non-photoactive phenyl;

R 4 represents a photoactive phenyl;

W represents silicon (Si) or germanium (Ge);

n represents an integer greater than or equal to 1; and

m represents an integer of 0 or 1;

combining the at least one cyclic compound or the at least one non-cyclic compound with at least one casting solvent, thereby forming a liquid adhesion promoter composition;

spin coating the liquid adhesion promoter composition on the surface of the substrate, evaporating the liquid and thereby forming a solid adhesion promoter composition on the surface of the substrate;

baking the substrate such that the solid adhesion promoter composition reacts with the surface of the substrate, thereby forming the adhesion promoter on the surface of the substrate, the adhesion promoter having a thickness between 1.32 nm and 1.70 nm; and

rinsing the adhesion promoter on the surface of the substrate with the at least one casting solvent.

2. The method according to claim 1 , wherein W represents silicon (Si) and the substrate is a silicon substrate.

3. The method according to claim 1 , wherein a temperature range for the baking is from 80° C. to 180° C.

4. The method according to claim 1 , wherein the solid adhesion promoter composition is a film on the surface of the substrate.

5. The method according to claim 1 , wherein the adhesion promoter composition prepared includes the at least one cyclic compound.

6. A semiconductor comprising an adhesion promoter formed according to the method of claim 1 .

7. The method according to claim 1 , wherein the at least one cyclic compound is hexaphenylcyclotrisiloxane.

8. The method according to claim 1 , wherein the at least one cyclic compound is 2,4,6-trimethyl-2,4,6-triphenylcyclotrisiloxane.

9. The method according to claim 1 , wherein the at least one cyclic compound is triphenylsulfonium 4-phenylsulfonate-2,2,4, 6, 6-pentaphenyl-cyclotrisiloxane.

10. The method according to claim 5 , wherein R 1 and R 2 are non-reactive phenyl.

11. The method according to claim 10 , wherein W is silicon (Si).

12. The method according to claim 11 , wherein n is 3.

13. The method according to claim 12 , wherein m is 0.

14. A method for forming an adhesion promoter on a surface of a silicon substrate, the method comprising:

preparing an adhesion promoter composition including at least one cyclic compound having a formula

wherein:

R 1 and R 2 each independently represents a non-photoactive phenyl;

W represents silicon (Si);

n represents an integer of 3; and

m represents an integer of 0;

combining the at least one cyclic compound with at least one casting solvent, thereby forming a liquid adhesion promoter composition;

spin coating the liquid adhesion promoter composition on the surface of the silicon substrate, evaporating the liquid and thereby forming a solid adhesion promoter composition on the surface of the silicon substrate;

baking the silicon substrate such that the solid adhesion promoter composition reacts with the surface of the silicon substrate, thereby forming the adhesion promoter on the surface of the silicon substrate, the adhesion promoter having a thickness between 1.32 nm and 1.70 nm; and

rinsing the adhesion promoter on the surface of the substrate with the at least one casting solvent.

15. The method according to claim 14 , wherein the at least one cyclic compound is hexaphenylcyclotrisiloxane.

16. The method according to claim 14 , wherein a temperature range for the baking is from 80° C. to 180° C.

17. The method according to claim 14 , wherein the solid adhesion promoter composition is a film on the surface of the silicon substrate.

18. A semiconductor comprising an adhesion promoter formed according to the method of claim 14 .

19. A method for forming an adhesion promoter on a surface of a substrate, the method comprising:

preparing an adhesion promoter composition including at least one cyclic compound or at least one non-cyclic compound, the cyclic compound having a formula,

and the non-cyclic compound having a formula,

wherein:

R 1 and R 2 each independently represents a non-photoactive phenyl, a photoactive phenyl, or a C 1 -C 4 alkyl;

R 3 represents a non-photoactive phenyl;

R 4 represents a photoactive phenyl;

W represents silicon (Si) or germanium (Ge);

n represents an integer greater than or equal to 1; and

m represents an integer of 0 or 1;

combining the at least one cyclic compound or the at least one non-cyclic compound with at least one casting solvent, thereby forming a liquid adhesion promoter composition;

spin coating the liquid adhesion promoter composition on the surface of the substrate, evaporating the liquid and thereby forming a solid adhesion promoter composition on the surface of the substrate;

baking the substrate at a temperature from 80° C. to 180° C. such that the solid adhesion promoter composition reacts with the surface of the substrate, thereby forming the adhesion promoter on the surface of the substrate, the adhesion promoter having a thickness between 1.32 nm and 1.70 nm; and

rinsing the adhesion promoter on the surface of the substrate with the at least one casting solvent.

20. A semiconductor comprising an adhesion promoter formed according to the method of claim 19 .

21. The method according to claim 1 , where m is 1.