Highly etch selective amorphous carbon film
Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.
1. A method of forming an amorphous carbon film, comprising:
depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region;
forming a doped amorphous carbon film by implanting a dopant or an inert species into the amorphous carbon film in a second processing region, wherein the dopant or the inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof, wherein a target temperature during implanting the dopant or the inert species is between about −100 degrees Celsius and about 0 degrees Celsius;
patterning the doped amorphous carbon film; and
etching the underlayer.
2. The method of claim 1 , wherein the underlayer comprises a single layer or a dielectric stack.
3. The method of claim 1 , wherein depositing the amorphous carbon film on the underlayer comprises:
flowing a hydrocarbon-containing gas mixture into the first processing region; and
generating an RF plasma in the first processing region to form the amorphous carbon film on the underlayer.
4. The method of claim 3 , wherein a distance between a gas distribution showerhead positioned in the first processing region and the susceptor is between about 200 mils and about 1,000 mils.
5. The method of claim 4 , wherein a pressure within the first processing region is between about 4 Torr and about 8 Torr.
6. The method of claim 1 , wherein an implant energy utilized to energize the dopant or the inert species is between about 5 keV and about 60 keV.
7. The method of claim 6 , wherein an ion dosage is between about 5×10 13 ions/cm 2 and about 5×10 16 ions/cm 2 .
8. The method of claim 6 , wherein is carbon.
9. A method of forming an amorphous carbon film, comprising:
depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region;
forming a doped amorphous carbon film by implanting a dopant or an inert species into the amorphous carbon film in a second processing region, wherein the dopant or the inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof, wherein a target temperature during implanting the dopant or the inert species is between about −100 degrees Celsius and about 0 degrees Celsius;
patterning the doped amorphous carbon film; and
etching the underlayer, wherein the doped amorphous carbon film has a refractive index at 633 nm of from about 2.1 to about 2.2.
10. The method of claim 9 , wherein the doped amorphous carbon film has a k-value at 633 nm of less than 1.0.
11. The method of claim 9 , wherein the doped amorphous carbon film has a Young's modulus (GPa) of from about 70 to about 200 GPa.
12. The method of claim 11 , wherein the doped amorphous carbon film has a hardness (GPa) of from about 14 GPa to about 22 GPa.
13. The method of claim 12 , wherein the doped amorphous carbon film has a stress (MPa) of from about −600 MPa to about 0 MPa.
14. The method of claim 13 , wherein the doped amorphous carbon film has a density (g/cc) from about 1.95 g/cc to about 2.1 g/cc.
15. The method of claim 14 , wherein the doped amorphous carbon film has a thickness between about 10 Å and about 50,000 Å.
16. A method of forming an amorphous carbon film, comprising:
depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region;
forming a doped amorphous carbon film by implanting a carbon dopant into the amorphous carbon film in a second processing region, wherein a target temperature during implanting the carbon dopant is between about −100 degrees Celsius and about 0 degrees Celsius;
patterning the doped amorphous carbon film; and
etching the underlayer, wherein the doped amorphous carbon film has a hardness (GPa) of from about 14 GPa to about 22 GPa.
17. The method of claim 16 , wherein the doped amorphous carbon film has a refractive index at 633 nm of from about 2.1 to about 2.2.
18. The method of claim 17 , wherein the doped amorphous carbon film has a k-value at 633 nm of less than 1.0.
19. The method of claim 16 , wherein the doped amorphous carbon film has a Young's modulus (GPa) of from about 70 to about 200 GPa.
20. The method of claim 19 , wherein the doped amorphous carbon film has:
a stress (MPa) of from about −600 MPa to about 0 MPa;
a density (g/cc) from about 1.95 g/cc to about 2.1 g/cc; and
a thickness between about 10 Å and about 50,000 Å.