Semiconductor sensor package

1. A method, comprising: forming a plurality of through holes in a substrate, the substrate including a first surface and a second surface;

forming a plurality of first trenches in the first surface of the substrate, each first trench of the plurality of first trenches being substantially parallel to each other, each first trench of the plurality of first trenches is overlapping and aligned with a number of through holes of the plurality of through holes;

forming a plurality of second trenches in the first surface of the substrate, each second trench of the plurality of second trenches being transverse to the plurality of first trenches and overlapping at least one of the through holes of the plurality of through holes; and

forming a non-conductive material in the plurality of through holes, the plurality of first trenches, and the plurality of second trenches.

2. The method of claim 1 , further comprising coupling a cap to the non-conductive material including welding the cap to the non-conductive material by ultrasonic plastic welding.

3. The method of claim 1 , further comprising:

forming a plurality of third trenches in the second surface of the substrate, each third trench of the plurality of third trenches aligned with the number of through holes of the plurality of through holes, the plurality of first trenches, the plurality of through holes, and the plurality of third trenches forming a plurality of contiguous I-shaped holes; and

forming the non-conductive material in the plurality of contiguous I-shaped holes.

4. The method of claim 3 , further comprising:

forming a plurality of fourth trenches in the second surface of the substrate, each fourth trench being transverse to the plurality of third trenches and overlapping at least one of the through holes; and

forming the non-conductive material in the plurality of fourth trenches.

5. The method of claim 1 , wherein forming the non-conductive material in the plurality of through holes, the plurality of first trenches, and the plurality of second trenches includes injection molding the non-conductive material.

6. The method of claim 1 , further comprising coupling a second die to a first support region of the substrate, the second die being electrically coupled to the substrate.

7. The method of claim 1 , further comprising: coupling a first die to a first support region of the substrate; and coupling a cap to the non-conductive material forming a chamber that surrounds the first die.

8. A method, comprising: coupling a first semiconductor die to a substrate, the substrate including a first surface and a second surface; forming a number of through holes that extend through the substrate; forming a trench in the first surface of the substrate, the trench being aligned and overlapping with the number of through holes; forming a non-conductive material in the trench and the number of through holes, the non-conductive material having a first surface flush with the first surface of the substrate and a number of second surfaces flush with the second surface of the substrate; and coupling a cap to the first surface of the non-conductive material, a sidewall of the cap being aligned and overlapping with the number of through holes.

9. The semiconductor package of claim 8 , wherein coupling the cap to the non-conductive material includes ultrasonic-plastic welding the cap to the non-conductive material.

10. The semiconductor package of claim 8 , wherein forming the non-conductive material in the trench and the number of through holes includes forming a number of contiguous T-shaped non-conductive elements.

11. The semiconductor package of claim 8 , further comprising coupling a second semiconductor die to the substrate to be electrically coupled to electrical connections that are in the substrate.

12. A method, comprising: forming a non-conductive coupling element in a support substrate, the support substrate including a first surface, a second surface, and a plurality of through holes extending through the support substrate, the forming of the non-conductive coupling element including: forming a first portion having a first surface that is substantially coplanar with the first surface of the support substrate and extending into the support substrate; and forming a plurality of second portions, each second portion being coupled to the first portion and in a respective one of the plurality of through holes; forming a first support region on the first surface of the support substrate between at least two of the plurality of second portions of the non-conductive coupling element; coupling a first die to the first support region on the first surface of the support substrate; and coupling a cap to the first portion, the cap is overlapping the plurality of second portions of the non-conductive coupling element, thereby forming a first chamber around the first die.

13. The method of claim 12 , further comprising:

forming a second support region on the first surface of the support substrate; and

coupling a second die to the second support region.

14. The method of claim 13 , wherein coupling the first die and the second die to the support substrate further includes electrically coupling the first die and the second die to the support substrate.

15. The method of claim 14 , wherein coupling the cap to the first portion of the non-conductive coupling element further includes forming a second chamber surrounding the second die.

16. The method of claim 12 , wherein forming the non-conductive coupling element further includes:

forming a third portion of the non-conductive coupling element in the second surface of the support substrate opposite the first portion, the third portion of the non-conductive coupling element being coupled to the plurality of second portions.

17. The method of claim 12 , further comprising coupling a second die to the first support region.