Selective deposition of metal-organic frameworks
Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.
1. A method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate, the method comprising:
selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles; and
providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film, wherein the low-k dielectric film has gaps on locations where no metal-containing film was deposited.
2. The method according to claim 1 , wherein the area-selective deposition process is an atomic layer deposition process.
3. The method according to claim 1 , wherein the metal-containing film is deposited such that it comprises at least one metal ion or a cluster of metal ions selected from the group consisting of: Zn, Fe, In, Co, Cu, Mn, Li, B, Cd, Hg, Mg, Al, Zr, Hf, Ti, Ta, and Pr.
4. The method according to claim 1 , wherein depositing the metal-containing film comprises exposing the metal-containing film to an oxidizing agent thereby forming a metal-oxide.
5. The method according to claim 1 , wherein the at least one organic ligand is azole-based.
6. The method according to claim 1 , wherein the at least one organic ligand is a carboxylic acid.
7. The method according to claim 1 , wherein the one or more deposition cycles comprises 150 or fewer deposition cycles.
8. The method according to claim 1 , further comprising:
applying an etch stop layer over the low-k dielectric film and over metal contacts in between the exposed dielectric locations;
depositing a gap-filling, low-k dielectric over the etch stop layer such that the gap-filling, low-k dielectric fills the gaps in the low-k dielectric film;
covering the gap-filling, low-k dielectric with a hard mask;
pattering the hard mask, the gap-filling, low-k dielectric, and the etch stop layer such that at least one opening is created towards the metal contacts; and
applying a metallization layer resulting in at least one via in contact with at least one of the metal contacts.
9. A method of forming a semiconductor device comprising a substrate structure by forming a low-k dielectric film selectively on exposed dielectric locations in a substrate, wherein the substrate structure is configured to interconnect individual devices of the semiconductor device, and wherein the method comprises:
selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles; and
providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film, wherein the low-k dielectric film has gaps on locations where no metal-containing film was deposited.
10. The method according to claim 9 , wherein the area-selective deposition process is an atomic layer deposition process.
11. The method according to claim 9 , wherein the metal-containing film is deposited such that it comprises at least one metal ion or a cluster of metal ions selected from the group consisting of: Zn, Fe, In, Co, Cu, Mn, Li, B, Cd, Hg, Mg, Al, Zr, Hf, Ti, Ta, and Pr.
12. The method according to claim 9 , wherein depositing the metal-containing film comprises exposing the metal-containing film to an oxidizing agent thereby forming a metal-oxide.
13. The method according to claim 9 , wherein the at least one organic ligand is azole-based.
14. The method according to claim 9 , wherein the at least one organic ligand is a carboxylic acid.