Optoelectronic semiconductor device

1. A semiconductor device comprising:

a first reflector;

a second reflector on the first reflector;

a semiconductor system directly contacting the first reflector and the second reflector and comprising a side wall;

a substrate, and the first reflector being between the substrate and the semiconductor system;

an insulating layer covering the side wall of the semiconductor system; and

an upper electrode on the semiconductor system;

wherein the second reflector is closer to the upper electrode than the first reflector is to the upper electrode; and

wherein the first reflector comprises a first width and the second reflector comprises a second width larger than the first width.

2. The semiconductor device of claim 1 , wherein the first reflector comprises a side wall covered by the insulating layer.

3. The semiconductor device of claim 1 , wherein the insulating layer directly contacts the first reflector and the second reflector.

4. The semiconductor device of claim 1 , wherein from a cross section of the semiconductor device, the semiconductor system comprises a third width equal to the first width.

5. The semiconductor device of claim 1 , wherein the first reflector further comprises a first lower surface with a first portion and a second portion, and the insulating layer overlaps the first portion.

6. The semiconductor device of claim 5 , further comprising an electrical connector overlapping the second portion and between the first reflector and the substrate.

7. The semiconductor device of claim 1 , further comprising a lower electrode electrically connecting to the semiconductor system.

8. The semiconductor device of claim 1 , further comprising a coupling layer between the first reflector and the substrate.

9. The semiconductor device of claim 1 , further comprising a coupling layer covering the insulating layer.

10. The semiconductor device of claim 9 , wherein from a cross section of the semiconductor device, the semiconductor system comprises a third width and the coupling layer comprises a fourth width different from the third width.

11. The semiconductor device of claim 1 , wherein the semiconductor system is a laser diode.

12. The semiconductor device of claim 1 , wherein a material of the insulating layer is epoxy or benzocyclobutene (BCB).

13. The semiconductor device of claim 1 , wherein the first reflector, the second reflector or both comprise distributed Bragg reflector (DBR).

14. The semiconductor device of claim 1 , wherein the substrate comprises a fifth width larger than the first width.

15. The semiconductor device of claim 1 , wherein the semiconductor system comprises a third width smaller than the second width.

16. The semiconductor device of claim 1 , wherein the semiconductor system comprises a third width and the substrate comprises a fifth width larger than the third width.

17. The semiconductor device of claim 1 , wherein the second reflector comprises a second lower surface facing the first reflector, and the second lower surface comprises a part without overlapping the first reflector, and the insulating layer covers the part.

18. A semiconductor device comprising:

a first reflector comprising a side wall and a first width;

a second reflector comprising a second width larger than the first width and disposed on the first reflector;

a semiconductor system directly contacting the first reflector and the second reflector;

a substrate, wherein the first reflector is closer to the substrate than the second reflector is to the substrate;

an insulating layer covering the side wall of the first reflector; and

an upper electrode on the semiconductor system;

wherein the second reflector is closer to the upper electrode than the first reflector is to the upper electrode.

19. The semiconductor device of claim 18 , wherein the semiconductor system is a laser diode.

20. The semiconductor device of claim 18 , wherein the upper electrode physically connects to the second reflector.