Method of producing a lighting device
A method of producing a lighting device includes a radiation-emitting optoelectronic component, including: arranging the component on a carrier, applying a first layer on the carrier, wherein the first layer surrounds the component at least laterally in the form of a circumferential frame, and subsequently applying a second layer on the first layer laterally next to the frame, wherein the second layer includes a greater hardness than the first layer.
1. A method of producing a lighting device comprising a radiation-emitting optoelectronic component, comprising:
arranging the radiation-emitting optoelectronic component on a carrier,
applying a first layer on the carrier, wherein the first layer surrounds the radiation-emitting optoelectronic component at least laterally in the form of a circumferential frame, and
subsequently applying a second layer on the first layer laterally next to the circumferential frame, wherein the second layer comprises a greater hardness than the first layer.
2. The method according to claim 1 , wherein before applying the second layer, a third layer is applied on the first layer, the third layer surrounds the circumferential frame of the first layer at least laterally in the form of a second circumferential frame, the second layer is subsequently applied on the third layer laterally next to the second circumferential frame, and the third layer comprises a material less transmissive to the electromagnetic radiation of the radiation-emitting optoelectronic component than the material of the first layer.
3. The method according to claim 1 , wherein after applying the first layer, a plate is placed onto the radiation-emitting optoelectronic component, and an interspace between the plate and the first layer is filled with a molding material with the aid of a mold method and the second layer is formed.
4. The method according to claim 2 , wherein after applying the third layer, a plate is placed onto the radiation-emitting optoelectronic component, and an interspace between the plate and the third layer is filled with a molding material with the aid of a mold method and the second layer is formed.
5. The method according to claim 1 , wherein before applying the first layer, a protective layer is applied on a top side of the radiation-emitting optoelectronic component, and the first layer is subsequently applied.
6. The method according to claim 3 , wherein the first layer is applied on a top side of the radiation-emitting optoelectronic component or on a top side of a protective layer that is deposited on a top side of the radiation-emitting optoelectronic component, and as a result of placing the plate, the first layer is displaced from the top side of the radiation-emitting optoelectronic component or from the top side of the protective layer at least partly into an edge region next to the top side of the radiation-emitting optoelectronic component or next to the protective layer.
7. The method according to claim 3 , wherein the first layer is also applied on a top side of the radiation-emitting optoelectronic component or on a top side of a protective layer that is deposited on a top side of the radiation-emitting optoelectronic component, and the first layer is at least partly removed from the top side of the radiation-emitting optoelectronic component or from the top side of the protective layer with the aid of a grinding process, a milling process or a cutting process.
8. The method according to claim 1 , wherein the third layer is applied on a top side of the radiation-emitting optoelectronic component or on a top side of a protective layer that is deposited on a top side of the radiation-emitting optoelectronic component and at least on a circumferential frame of the first layer, and as a result of placing the plate, material of the third layer is displaced from the top side of the radiation-emitting optoelectronic component or from the top side of the protective layer and from the top side of the circumferential frame of the first layer at least partly into an edge region laterally next to the circumferential frame of the first layer and a second circumferential frame is constituted of the material of the third layer.
9. The method according to claim 1 , wherein the third layer is applied on a top side of the radiation-emitting optoelectronic component or on a top side of a protective layer that is deposited on a top side of the radiation-emitting optoelectronic component and on a circumferential frame of the first layer, and the second layer is at least partly removed from the top side of the radiation-emitting optoelectronic component or from the top side of the protective layer and from the top side of the circumferential frame of the first layer with the aid of a grinding process, a milling process or a cutting process.
10. The method according to claim 1 , wherein the radiation-emitting optoelectronic component comprises a semiconductor chip and a conversion element, and the conversion element is arranged on the semiconductor chip and constitutes at least one part of the top side of the radiation-emitting optoelectronic component.
11. The method according to claim 1 , wherein the first layer and/or the second layer comprise(s) a thickness of 30 μm to 600 μm.
12. The method according to claim 1 , wherein the first layer comprises a matrix material or a silicone, and scattering particles, and the second layer comprises a mold material.
13. The method according to claim 1 , wherein the radiation-emitting optoelectronic component comprises a semiconductor chip, wherein at least in a circumferential frame edge region adjoining the top side of the semiconductor chip, a trench is introduced into the first layer.
14. A lighting device comprising a radiation-emitting optoelectronic component, wherein the radiation-emitting optoelectronic component is arranged on a carrier, a first layer is arranged on the carrier, the first layer surrounds the radiation-emitting optoelectronic component as far as a top side of the radiation-emitting optoelectronic component in the form of a circumferential frame, a second layer is arranged laterally with respect to the circumferential frame on the first layer, and the second layer comprises a greater hardness than the first layer.
15. The lighting device according to claim 14 , wherein the circumferential frame projects from the first layer beyond a top side of the radiation-emitting optoelectronic component.
16. The lighting device according to claim 14 , wherein the first layer comprises a matrix material and scattering particles, wherein the second layer comprises a mold material.
17. The lighting device according to claim 14 , wherein the radiation-emitting optoelectronic component comprises a semiconductor chip with a conversion element.
18. The lighting device according to claim 14 , wherein the circumferential frame comprises a width in a plane of the top side of the radiation-emitting optoelectronic component of 50 μm to 600 μm.
19. The lighting device according to claim 14 , wherein the circumferential frame is surrounded by a second circumferential frame of a third layer, and the third layer comprises a material less transmissive to the electromagnetic radiation of the radiation-emitting optoelectronic component than the material of the first layer.
20. The lighting device according to claim 14 , wherein the first layer comprises a greater optical density than the second layer.