Fan-out package with cavity substrate
Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
1. A method of forming a semiconductor structure, the method comprising:
forming a cavity substrate, wherein forming the cavity substrate comprises:
forming a masking layer on a substrate;
patterning the masking layer to form pillar openings over the substrate;
forming conductive pillars in respective ones of the pillar openings;
after forming the conductive pillars, patterning the masking layer to form a cavity opening over the substrate; and
forming a cavity in the substrate below the cavity opening in the masking layer, wherein the cavity substrate comprises the substrate and the patterned masking layer;
attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device; and
forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
2. The method of claim 1 , wherein the molding compound is interposed between sidewalls of the semiconductor device and sidewalls of the masking layer.
3. A method of forming a semiconductor structure, the method comprising:
forming a cavity substrate, wherein forming the cavity substrate comprises:
forming a masking layer on a substrate;
patterning the masking layer to form pillar openings and a recess opening;
forming conductive pillars in respective ones of the pillar openings and a sacrificial conductive plug in the recess opening; and
removing the sacrificial conductive plug and forming a cavity in the substrate within the recess opening, wherein the cavity substrate comprises the substrate and the masking layer;
attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device; and
forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
4. The method of claim 3 , wherein the molding compound is interposed between sidewalls of the semiconductor device and sidewalls of the masking layer.
5. A method of forming a semiconductor structure, the method comprising:
forming a cavity substrate, wherein forming the cavity substrate comprises:
forming a first masking layer on a first carrier substrate;
patterning the first masking layer to form pillar openings;
forming conductive pillars in respective ones of the pillar openings;
after forming the conductive pillars, removing the first masking layer;
forming a second masking layer over the first carrier substrate;
forming conductive traces over the second masking layer and the conductive pillars, the conductive traces comprising a first conductive trace;
placing a first substrate over the second masking layer and the conductive traces;
removing the first carrier substrate; and
patterning the second masking layer to form a cavity in the second masking layer, wherein the cavity substrate comprises the first substrate and the second masking layer;
attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device; and
forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
6. The method of claim 5 , wherein the molding compound is interposed between the semiconductor device and the second masking layer.
7. The method of claim 5 , wherein the cavity extends into the first substrate.
8. A method of forming a semiconductor structure, the method comprising:
forming a cavity substrate, wherein forming the cavity substrate comprises:
forming a first masking layer on a first carrier substrate;
patterning the first masking layer to form pillar openings and a recess opening;
forming conductive pillars in respective ones of the pillar openings and a sacrificial conductive region in the recess opening;
after forming the conductive pillars, removing the first masking layer;
forming a second masking layer over the first carrier substrate;
forming conductive traces over the second masking layer and the conductive pillars, the conductive traces comprising a first conductive trace over the sacrificial conductive region;
placing a first substrate over the second masking layer and the conductive traces;
removing the first carrier substrate; and
removing the sacrificial conductive region to form a cavity, wherein the cavity substrate comprises the first substrate and the second masking layer;
attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device; and
forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
9. The method of claim 8 , wherein removing the sacrificial conductive region comprises removing the first conductive trace.
10. The method of claim 8 , wherein the molding compound is interposed between the semiconductor device and the second masking layer.
11. A method of forming a semiconductor structure, the method comprising:
forming a first redistribution structure over a carrier substrate;
attaching a first semiconductor device to the first redistribution structure;
attaching a cavity substrate to the first redistribution structure;
forming a molding compound between sidewalls of the cavity substrate and sidewalls of the first semiconductor device; and
electrically coupling a second semiconductor device to the cavity substrate, wherein the cavity substrate is electrically interposed between the second semiconductor device and the first redistribution structure.
12. The method of claim 11 , further comprising, after forming the molding compound, forming a second redistribution structure over the molding compound, wherein the cavity substrate is interposed between the first redistribution structure and the second redistribution structure.
13. The method of claim 11 , wherein the cavity substrate covers the first semiconductor device.
14. The method of claim 11 , further comprising attaching a second semiconductor device to the first redistribution structure, wherein the cavity substrate at least partially covers the first semiconductor device, and wherein the cavity substrate does not cover the second semiconductor device.
15. The method of claim 11 , wherein the molding compound comprises a first molding compound layer and a second molding compound layer over the first molding compound layer.
16. A semiconductor structure comprising:
a first redistribution structure;
a cavity substrate bonded to the first redistribution structure, the cavity substrate comprising conductors extending from a first side of the cavity substrate to a second side of the cavity substrate;
a first semiconductor device, a front side of the first semiconductor device bonded to the first redistribution structure, wherein the first semiconductor device extends through the cavity substrate;
a first underfill interposed between the first semiconductor device and the first redistribution structure;
a second semiconductor device, a front side of the second semiconductor device bonded to the first redistribution structure, wherein the cavity substrate covers a backside of the second semiconductor device;
a second underfill interposed between the second semiconductor device and the first redistribution structure, the first underfill being separate from the second underfill; and
a molding compound extending between sidewalls of the first semiconductor device and sidewalls of the cavity substrate, the molding compound extending between sidewalls of the second semiconductor device and the sidewalls of the cavity substrate.
17. The semiconductor structure of claim 16 , wherein the molding compound extends between the first redistribution structure and the cavity substrate.
18. The semiconductor structure of claim 16 , wherein the molding compound extends between the backside of the second semiconductor device and the cavity substrate.
19. The semiconductor structure of claim 16 , wherein the cavity substrate surrounds the first semiconductor device and the second semiconductor device in a plan view.
20. The semiconductor structure of claim 16 , wherein the cavity substrate, the first semiconductor device and the second semiconductor device are bonded to the first redistribution structure using a solder connection.