Methods for enhancing selectivity in SAM-based selective deposition
Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.
1. A method of selective deposition comprising:
exposing a patterned substrate comprising a first metal surface and a second dielectric surface to a SAM molecule to form a protected second surface and a carbonized layer on the first surface;
exposing the patterned substrate to an oxygenating agent to remove the carbonized layer from the first surface; and
exposing the substrate to a plurality of reactants separately to selectively deposit a film on the first surface over the protected second surface.
2. The method of claim 1 , wherein the first metal surface comprises one or more of ruthenium or cobalt.
3. The method of claim 1 , wherein the patterned substrate is exposed to the SAM molecule by CVD, ALD or immersion.
4. The method of claim 1 , wherein the oxygenating agent consists essentially of oxygen.
5. The method of claim 4 , wherein the oxygenating agent does not comprise a plasma.
6. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature in the range of about 100° C. to about 350° C.
7. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs for a period in the range of about 30 seconds to about 10 minutes.
8. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature of about 275° C. for a period of about 1 minute.
9. The method of claim 1 , wherein exposing the substrate to an oxygenating agent does not affect the integrity of the protected second surface.
10. The method of claim 1 , wherein the film comprises a dielectric material.
11. A method of selective deposition comprising:
exposing a patterned substrate to a SAM molecule to form a protected second surface and a carbonized layer on the first surface, the patterned substrate comprising a first metal surface comprising ruthenium or cobalt and a second dielectric surface;
exposing the patterned substrate to oxygen gas at a temperature in the range of about 250° C. to about 300° C. for a period in the range of about 30 seconds to about 2 minutes to remove the carbonized layer from the first surface; and
sequentially exposing the substrate to a plurality of reactants to selectively deposit a dielectric material on the first surface over the second surface.