Method and apparatus for stacking devices in an integrated circuit assembly
Methods and apparatuses for stacking devices in an integrated circuit assembly are provided. A tray for supporting multiple dies of a semiconductor material enables both top side processing and bottom side processing of the dies. The dies can be picked and placed for bonding on a substrate or on die stacks without flipping the dies, thereby avoiding particulate debris from the diced edges of the dies from interfering and contaminating the bonding process. In an implementation, a liftoff apparatus directs a pneumatic flow of gas to lift the dies from the tray for bonding to a substrate, and to previously bonded dies, without flipping the dies. An example system allows processing of both top and bottom surfaces of the dies in a single cycle in preparation for bonding, and then pneumatically lifts the dies up to a target substrate so that top sides of the dies bond to bottom sides of dies of the previous batch, in an efficient and flip-free assembly of die stacks.
1. A method, comprising:
placing a die in a die tray comprising at least one through-hole allowing processing on both a top side and a bottom side of the die;
preparing both the top side and the bottom side of the die for direct bonding to a substrate or to another die without flipping the die;
direct bonding the top side to a respective substrate or to another die; and
direct bonding the bottom side to a respective substrate or to another die.
2. The method of claim 1 , further comprising removing the direct bonded die from the die tray or removing the die tray from the direct bonded die.
3. The method of claim 1 , wherein the die comprises an ultrathin die.
4. The method of claim 1 , further comprising simultaneously direct bonding the top side of the die and the bottom side of the die to respective substrates or dies.
5. The method of claim 4 , further comprising placing multiple dies in multiple respective instances of the die tray and simultaneously direct bonding respective top sides and bottom sides of the multiple dies to each other to make a direct bonded stack of the multiple dies without flipping a die of the multiple dies.
6. The method of claim 5 , wherein at least some of the multiple dies have different diameters or have different footprint areas from each other.
7. The method of claim 5 , wherein the multiple dies comprise ultrathin dies.
8. The method of claim 1 , wherein at least one of the direct bondings comprises a direct bonding between a nonmetal material of the die and a nonmetal material of the respective substrate or die being direct bonded to.
9. The method of claim 1 , wherein at least one of the direct bondings comprises a direct bonding between a metal of the die and a metal of the respective substrate or die being direct bonded to.
10. The method of claim 1 , wherein at least one of the direct bondings comprises a direct hybrid bonding between a metal and a nonmetal of the die and a corresponding metal and a nonmetal of the respective substrate or die being direct bonded to.
11. A method, comprising:
placing dies in a die tray comprising through-holes allowing processing on both a top side and a bottom side of each die;
preparing both the top sides of the dies and the bottom sides of the dies for bonding to a surface of a substrate or to other dies already bonded to the substrate;
pneumatically lifting the dies from the die tray and without flipping the dies bonding the top sides of the dies to the surface of the substrate or to the other dies already bonded to the substrate; and
repeating the method multiple times to bond top sides of each next batch of the dies to each previous batch of the dies already bonded to the substrate to make respective stacks of the dies.
12. The method of claim 11 , further comprising simultaneously removing an upper protective coating and a lower protective coating from respective top sides and bottom sides of the dies;
activating the top sides of the dies; and
terminating the top sides of the dies before pneumatically lifting the dies to bond with the substrate or with the previous batch of the dies.
13. The method of claim 11 , wherein the dies comprise ultrathin dies for assembling stacks of the ultrathin dies without flipping the ultrathin dies.
14. An apparatus, comprising:
multiple instances of a die tray configured to make a stack of multiple direct bonded dies in simultaneous direct bonding fabrication operations of the respective top sides and respective bottom sides of the multiple direct bonded dies;
a through-hole in each die tray to enable multiple fabrication operations on a top side and a bottom side of each die;
tabs or a lip of each die tray to secure a respective die in place in each die tray during the multiple fabrication operations on the top side and the bottom side of each die;
wherein a fabrication operation of the multiple fabrication operations is selected from the group consisting of removing a protective layer from a side of each die, etching a resist layer of a side of each die, cleaning a side of each die, surface activating a side of each die, treating a side of each die with hydrofluoric acid or with hydrogen fluoride, plasma activating a side of each die, terminating a surface of a side of each die, hydrogen-terminating a surface of a side of each die, hydroxyl-terminating a surface of a side of each die, direct bonding a side of each die, low temperature direct bonding a side of each die, direct hybrid bonding a side of each die, fusion bonding a side of each die, and hydrophobic wafer bonding a side of each die; and
wherein each die tray is impervious to the multiple fabrication operations.
15. The apparatus of claim 14 , wherein each die tray is configured to enable each fabrication operation to proceed simultaneously on the top side and the bottom side of each die.
16. The apparatus of claim 14 , wherein each die tray of the multiple instances of the die tray secures multiple dies to simultaneously make multiple stacks of multiple direct bonded dies in simultaneous direct bonding fabrication operations of the respective top sides and respective bottom sides of the multiple direct bonded dies of each stack.