High power silicon on insulator switch
An apparatus comprises a first RF port, a second RF port, a first resonator circuit and at least one second resonator circuit. The first resonator circuit and the second resonator circuit may be connected between the first RF port and the second RF port. The first resonator circuit may comprise a first inductor, a first capacitor, and a first stacked switch device. The second resonator circuit may comprise a second inductor, a second capacitor, and a second stacked switch device. The first capacitor and the first stacked switch device may be coupled in series across the first inductor. The second capacitor, the second inductor, and the second stacked switch device may be connected in parallel.
1. An apparatus comprising:
an RF input port;
an RF output port;
an RF common port;
a series transmit switch connected between said RF input port and said RF common port;
a first resonator circuit; and
a second resonator circuit, wherein the first resonator circuit and the second resonator circuit are connected in series between the RF common port and the RF output port, the first resonator circuit comprises a first inductor, a first capacitor, and a first stacked switch device, the second resonator circuit comprises a second inductor, a second capacitor, and a second stacked switch device, the first capacitor and the first stacked switch device are coupled in series across the first inductor, and the second capacitor, the second inductor, and the second stacked switch device are connected in parallel.
2. The apparatus according to claim 1 , wherein said second resonator circuit increases an input power handling capability of the apparatus over a particular frequency range.
3. The apparatus according to claim 1 , further comprising one or more additional second resonator circuits connected in series with the first resonator circuit and the second resonator circuit.
4. The apparatus according to claim 3 , wherein a total number of second resonator circuits connected in series and a number of stacked devices is determined based on a maximum input power of the apparatus.
5. The apparatus according to claim 3 , wherein each additional second resonator circuit further increases an input power handling capability of the apparatus over a particular frequency range.
6. The apparatus according to claim 3 , wherein each additional second resonator circuit added in series with the first resonator circuit and the second resonator circuit increases an amount of isolation provided by the first resonator circuit.
7. The apparatus according to claim 3 , wherein the one or more additional second resonator circuits reduce parasitic substrate capacitance and increase a switching speed of the apparatus.
8. The apparatus according to claim 3 , wherein the one or more additional second resonator circuits reduce switching times for switching the apparatus between a receive mode and a transmit mode.
9. The apparatus according to claim 3 , wherein the one or more additional second resonator circuits improve insertion loss and return loss by reducing parasitic substrate capacitances of the apparatus.
10. The apparatus according to claim 3 , wherein the one or more additional second resonator circuits reduce a trade off between an insertion loss and a switching speed of the apparatus.
11. The apparatus according to claim 1 , further comprising a third stacked switch device connected between the RF output port and a circuit ground potential.
12. The apparatus according to claim 11 , further comprising a fourth stacked switch device connected between the RF input port and the circuit ground potential.
13. The apparatus according to claim 1 , wherein the first stacked switch device and the second stacked switch device are in a conducting state when the apparatus is in a transmit mode.
14. The apparatus according to claim 1 , wherein the first stacked switch device and the second stacked switch device are in a non-conducting state when the apparatus is in a receive mode.
15. The apparatus according to claim 1 , wherein the first stacked switch device and the second stacked switch device are parts of a stack of devices with a tap allowing connection to be made to terminals of the first inductor, the second inductor, and the second capacitor.
16. The apparatus according to claim 1 , wherein the apparatus is implemented utilizing at least one of silicon-on-insulator technology and complementary metal oxide semiconductor technology.
17. The apparatus according to claim 1 , wherein the apparatus is part of a wireless communication system.
18. The apparatus according to claim 1 , wherein the first stacked switch device and the second stacked switch device comprise a plurality of transistors connected in series.
19. The apparatus according to claim 18 , wherein the plurality of transistors comprise field effect transistors.
20. An apparatus comprising:
a first RF port;
a second RF port;
a first resonator circuit; and
two or more second resonator circuits, wherein the first resonator circuit and the second resonator circuits are connected in series between the first RF port and the second RF port, the first resonator circuit comprises a first inductor, a first capacitor, and a first stacked switch device, each of the second resonator circuits comprises a second inductor, a second capacitor, and a second stacked switch device, the first capacitor and the first stacked switch device are coupled in series across the first inductor, and the second capacitor, the second inductor, and the second stacked switch device of each of the second resonator circuits are connected in parallel.