SiC epitaxial growth apparatus
A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
1. A SiC epitaxial growth apparatus comprising:
a susceptor having a mounting surface on which a wafer is placable;
a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and
an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface, and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view,
wherein the radiation member has a higher emissivity than that of the susceptor and has an exposed portion when viewed from the heater.
2. The SiC epitaxial growth apparatus according to claim 1 ,
wherein the heater and the wafer placed on the susceptor are disposed concentrically with each other, and a radial distance between an outer peripheral end of the heater and an outer peripheral end of the wafer placed on the susceptor is 1/12 or less of a diameter of the wafer in the plan view.
3. The SiC epitaxial growth apparatus according to claim 1 ,
wherein the radiation member and the wafer placed on the susceptor are disposed concentrically with each other, and a radial distance between an outer peripheral end of the radiation member and an outer peripheral end of the wafer placed on the susceptor is ⅙ or less of a diameter of the wafer in the plan view.
4. The SiC epitaxial growth apparatus according to claim 1 ,
wherein the emissivity of the radiation member is 1.5 times or more the emissivity of the susceptor.
5. The SiC epitaxial growth apparatus according to claim 1 , further comprising:
a center supporting element which supports a center portion of the susceptor from the back surface.
6. The SiC epitaxial growth apparatus according to claim 5 ,
wherein a radial width of the radiation member is 1/10 or more and ⅓ or less of a radius of the wafer placed on the susceptor.
7. The SiC epitaxial growth apparatus according to claim 1 ,
wherein the radiation member is engaged with the susceptor.
8. The SiC epitaxial growth apparatus according to claim 1 , further comprising:
an outer periphery supporting element which supports an outer peripheral end portion of the susceptor from the back surface.
9. The SiC epitaxial growth apparatus according to claim 8 ,
wherein a radial width of the radiation member is 1/200 or more and ⅕ or less of a radius of the wafer placed on the susceptor.
10. The SiC epitaxial growth apparatus according to claim 8 ,
wherein the radiation member is sandwiched and held between the susceptor and the outer periphery supporting element such that a portion of the radiation member is exposed as viewed from the heater.
11. The SiC epitaxial growth apparatus according to claim 1 ,
wherein an unevenness is formed on a surface of the radiation member on the heater side.