LAYERED STRUCTURE, ELECTRONIC DEVICE INCLUDING LAYERED STRUCTURE, SYSTEM INCLUDING ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING LAYERED STRUCTURE
In a first aspect of a present inventive subject matter, a layered structure includes a base including a first metal as a major component and a second metal that is different from the first metal, and a thermal oxide film of the base arranged on the base and containing an oxide of the first metal and an oxide of the second metal. The first metal contained in the base is more in atomic composition ratio than the second metal contained in the base. The first metal of the oxide contained in the thermal oxide film is less in atomic composition ratio than the first metal contained in the base. The second metal of the oxide contained in the thermal oxide film is equal to or more in atomic ratio than the first metal of the oxide contained in the thermal oxide film.
1 . A layered structure comprising:
a base comprising a first metal as a major component and a second metal that is different from the first metal; and
a thermal oxide film of the base arranged on the base and comprising an oxide of the first metal and an oxide of the second metal,
the first metal comprised in the base being more in atomic composition ratio than the second metal comprised in the base,
the first metal of the oxide comprised in the thermal oxide film being less in atomic composition ratio than the first metal comprised in the base, and
the second metal of the oxide comprised in the thermal oxide film being equal to or more in atomic ratio than the first metal of the oxide comprised in the thermal oxide film.
2 . The layered structure of claim 1 , wherein
the first metal comprises iron (Fe).
3 . The layered structure of claim 1 , wherein
the first metal comprises aluminum (Al).
4 . The layered structure of claim 1 , wherein
the second metal comprises a metal selected from metals of Group 6 in the periodic table.
5 . The layered structure of claim 1 , wherein
the base comprises stainless steel.
6 . The layered structure of claim 1 , wherein
the base comprises an uneven shape on at least a part of a surface of the base.
7 . The layered structure of claim 1 , wherein
the base comprises an uneven surface.
8 . The layered structure of claim 6 , wherein the uneven shape of the base comprises grooves.
9 . The layered structure of claim 1 , wherein the base comprises a bipolar plate.
10 . The layered structure of claim 1 further comprising:
a film comprising an electrically-conductive oxide and arranged on at least a part of the thermal oxide film.
11 . The layered structure of claim 10 , wherein
the electrically-conductive oxide comprised in the film comprises at least one metal selected from among tin (Sn), titanium (Ti), zirconium (Zr), zinc (Zn), indium (In) and gallium (Ga).
12 . The layered structure of claim 10 , wherein
the film further comprises at least one chemical element selected from among niobium (Nb), fluorine (F), antimony (Sb), bismuth (Bi), selenium (Se), tellurium (Te), chlorine (Cl), bromine (Br), iodine (I), vanadium (V), phosphorus (P) and tantalum (Ta).
13 . An electronic device comprising:
the layered structure of claim 1 .
14 . The electronic device of claim 13 , wherein the electronic device comprises a fuel cell.
15 . A system comprising:
the electronic device of claim 13 ; and
a central processing unit electrically connected to the electronic device.
16 . A layered structure comprising:
a base comprising a first metal as a major component and a second metal that is different from the first metal;
a thermal oxide film of the base arranged on the base and comprising an oxide of the first metal and an oxide of the second metal; and
a film comprising an electrically-conductive oxide and arranged on at least a part of the thermal oxide film,
the first metal comprised in the base being more in atomic composition ratio than the second metal comprised in the base,
the first metal of the oxide comprised in the thermal oxide film being less in atomic composition ratio than the first metal comprised in the base, and
the second metal of the oxide comprised in the thermal oxide film being equal to or more in atomic ratio than the first metal of the oxide comprised in the thermal oxide film.
17 . The layered structure of claim 16 , wherein
the electrically-conductive oxide comprised in the film comprises at least one metal selected from among tin (Sn), titanium (Ti), zirconium (Zr), zinc (Zn), indium (In) and gallium (Ga).
18 . The layered structure of claim 16 , wherein
the first metal comprises iron (Fe) and/or aluminum (Al).
19 . The layered structure of claim 16 , wherein
the second metal comprises a metal selected from metals of Group 6 in the periodic table.
20 . The layered structure of claim 16 , wherein
the second metal comprises chromium (Cr).
21 . The layered structure of claim 16 , wherein
the thermal oxide film is in a range of 1 nm to 100 nm in thickness.
22 . The layered structure of claim 16 , wherein
the base comprises stainless steel.