IP Library › Granted Patent US 11,140,345
Granted Patent B2
US 11,140,345 · App. 16/198,520 · Granted Oct 5, 2021

Solid state imaging device, imaging system, and drive method of solid state imaging device

Inventors: Kazuhiro Saito (Tokyo, JP); Tetsuya Itano (Sagamihara, JP)
Assignee: CANON KABUSHIKI KAISHA
H04N5/3745G06T7/55H04N5/378B60Q9/008B60W30/09B60W50/00B60W2050/0047B60W2520/10B60W2520/14B60W2540/18G06T2207/30261
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,140,345
App. No.
16/198,520
Granted
Oct 5, 2021
Kind
B2
Abstract

In a solid state imaging device as an embodiment, an analog-to-digital converter unit converts, in a first period, a first pixel signal into a digital signal, performs, in a determination period after the first period, the comparison of a second pixel signal with the reference signal set to a predetermined threshold, and converts, in a second period after the determination period, the second pixel signal at a gain in accordance with a result of the comparison performed in the determination period into a digital signal. Until the reference signal reaches the threshold from the first period, the reference signal generation unit changes the reference signal without changing a direction of change of the reference signal with respect to the lapse of time.

Claims (66)

1. A solid state imaging device comprising:

a pixel that comprises at least one photoelectric conversion unit and a transfer transistor connected to the photoelectric conversion unit, and outputs a pixel signal corresponding to an incident light;

a reference signal generation unit that generates a reference signal that changes with the lapse of time at a predetermined change rate;

an amplifier unit that outputs, as a signal based on the pixel signal, a signal obtained by the pixel signal being amplified at a predetermined gain; and

an analog-to-digital converter unit that includes a comparator unit configured to perform a comparison of the signal based on the pixel signal output by the amplifier unit with the reference signal, and converts the signal based on the pixel signal into a digital signal based on the comparison,

wherein, in a first period, the analog-to-digital converter unit converts a signal output by the amplifier unit in which reset has been released into a first digital signal,

in a determination period after the first period, the analog-to-digital converter unit performs the comparison of the signal based on the pixel signal with the reference signal set to a predetermined threshold,

in a second period after the determination period, the amplifier unit amplifies the signal based on the pixel signal at a gain in accordance with a result of the comparison performed in the determination period,

until the reference signal reaches the threshold from the first period, the reference signal generation unit changes the reference signal without changing a direction of change of the reference signal with respect to the lapse of time,

change of voltage of the reference signal with respect to the lapse of time is continued without being interrupted until the reference signal reaches the threshold after the reference signal starts to change in the first period, and

the direction of the change of the reference signal with respect to the lapse of time is not changed until the end of the determination period from the start of the first period.

2. The solid state imaging device according to claim 1 , wherein the reference signal generation unit changes the reference signal such that the change rate is constant until the reference signal reaches the threshold from the first period.

3. The solid state imaging device according to claim 1 , wherein, until the reference signal reaches the threshold after the first period has elapsed, the reference signal generation unit changes the reference signal at the change rate that is larger than the change rate in the first period.

4. The solid state imaging device according to claim 1 , wherein the predetermined threshold is at a signal level greater than or equal to 60□ and less than or equal to 100□ of a signal level output by the amplifier unit.

5. A solid state imaging device comprising:

a pixel comprising at least one photoelectric conversion unit and a transfer transistor connected to the photoelectric conversion unit;

a reference signal generation unit that generates at least one reference signal that changes with the lapse of time at a predetermined change rate; and

an analog-to-digital converter unit that includes a comparator unit configured to perform a comparison of the signal based on the pixel signal with the reference signal, and converts the pixel signal into a digital signal based on the comparison,

wherein, in a first period, the analog-to-digital converter unit converts a first pixel signal into a first digital signal,

in a determination period after the first period, the analog-to-digital converter unit performs the comparison of a second pixel signal with the reference signal set to a predetermined threshold,

in a second period after the determination period, the analog-to-digital converter unit converts the second pixel signal at a gain in accordance with a result of the comparison performed in the determination period into a second digital signal,

until the reference signal reaches the threshold from the first period, the reference signal generation unit changes the reference signal at the change rate that is larger than the change rate in the first period without changing a direction of change of the reference signal with respect to the lapse of time,

change of voltage of the reference signal with respect to the lapse of time is continued without being interrupted until the reference signal reaches the threshold after the reference signal starts to change in the first period, and

the direction of the change of the reference signal with respect to the lapse of time is not changed until the end of the determination period from the start of the first period.

6. The solid state imaging device according to claim 5 further comprising an amplifier unit that performs analog amplification on the first pixel signal and the second pixel signal, wherein the gain is an analog gain in the amplifier unit.

7. The solid state imaging device according to claim 5 further comprising a signal processing unit that performs digital amplification on the first digital signal and the second digital signal, wherein the gain is a digital gain in the signal processing unit.

8. The solid state imaging device according to claim 5 , wherein the gain is defined based on the change rate of the reference signal.

9. The solid state imaging device according to claim 8 ,

wherein the reference signal generation unit is capable of generating a plurality of the reference signals having different change rates, and

wherein the analog-to-digital converter unit converts the second pixel signal into the second digital signal by using any one of the plurality of reference signals in accordance with a result of the comparison in the determination period.

10. The solid state imaging device according to claim 8 ,

wherein the reference signal generator unit is capable of changing the change rate of the reference signal, and

wherein the analog-to-digital converter unit converts the second pixel signal into the second digital signal by using the reference signal having the change rate in accordance with a result of the comparison in the determination period.

11. The solid state imaging device according to claim 5 , wherein the first pixel signal is the pixel signal at time of reset of the photoelectric conversion unit, and the second pixel signal is the pixel signal at time of photoelectric conversion of the photoelectric conversion unit.

12. The solid state imaging device according to claim 5 ,

wherein, in a third period before the first period, the analog-to-digital converter unit converts the first pixel signal into a third digital signal by using the reference signal having the change rate that is different from the change rate in the first period, and

wherein, in the second period, the analog-to-digital converter unit converts the second pixel signal into the second digital signal by using any one of the reference signal in the first period and the reference signal in the third period in accordance with a result of the comparison in the determination period.

13. The solid state imaging device according to claim 12 , wherein the digital signal which is converted by using the reference signal having the change rate used in the second period is selected out of the first digital signal and the third digital signal, and the selected digital signal and the second digital signal are used to perform correlated double sampling.

14. A drive method of a solid state imaging device having a pixel that comprises a photoelectric conversion unit and a transfer transistor connected to the photoelectric conversion unit, and outputs a pixel signal corresponding to an incident light, a reference signal generation unit that generates a reference signal that changes with the lapse of time at a predetermined change rate, an amplifier unit that outputs, as a signal based on the pixel signal, a signal obtained by the pixel signal being amplified at a predetermined gain, and an analog-to-digital converter unit that includes a comparator unit configured to perform a comparison of the signal based on the pixel signal output by the amplifier unit with the reference signal, and converts the signal based on the pixel signal into a digital signal based on the comparison, the drive method comprising:

in a first period, converting a signal output by the amplifier unit in which reset has been released into a first digital signal;

in a determination period, performing the comparison of the signal based on the pixel signal with the reference signal set to a predetermined threshold;

in a second period after the determination period, the amplifier unit amplifying the signal based on the pixel signal at a gain in accordance with a result of the comparison performed in the determination period;

until the reference signal reaches the threshold from the first period, changing the reference signal without changing a direction of change of the reference signal with respect to the lapse of time;

change of voltage of the reference signal with respect to the lapse of time is continued without being interrupted until the reference signal reaches the threshold after the reference signal starts to change in the first period, and

the direction of the change of the reference signal with respect to the lapse of time is not changed until the end of the determination period from the start of the first period.

15. An imaging system comprising:

the solid state imaging device according to claim 1 : and

a signal processing device that processes image signals output from the solid state imaging device.

16. An imaging system comprising:

the solid state imaging device according to claim 5 : and

a signal processing device that processes image signals output from the solid state imaging device.

17. The imaging system according to claim 15 ,

wherein the pixel includes a plurality of the photoelectric conversion units, and

wherein the signal processing device processes the image signals generated by the plurality of the photoelectric conversion units, respectively, and acquires distance information on a distance from the solid state imaging device to a subject.

18. The imaging system according to claim 16 ,

wherein the pixel includes a plurality of the photoelectric conversion units, and

wherein the signal processing device processes the image signals generated by the plurality of the photoelectric conversion units, respectively, and acquires distance information on a distance from the solid state imaging device to a subject.

19. A solid state imaging device comprising:

a pixel comprising at least one photoelectric conversion unit and a transfer transistor connected to the photoelectric conversion unit, and outputs a pixel signal corresponding to an incident light;

a reference signal generation unit that generates at least one reference signal that changes with the lapse of time at a predetermined change rate; and

an analog-to-digital converter unit that includes a comparator unit configured to output a result of a comparison of the pixel signal with the reference signal,

wherein, in a first period, the analog-to-digital converter unit converts a first pixel signal into a first digital signal,

in a determination period after the first period, the analog-to-digital converter unit performs the comparison of a second pixel signal with the reference signal set to a predetermined threshold,

in a second period after the determination period, the analog-to-digital converter unit converts the second pixel signal at a gain in accordance with a result of the comparison performed in the determination period into a second digital signal,

change of voltage of the reference signal with respect to the lapse of time is continued without being interrupted until the reference signal reaches the threshold after the reference signal starts to change when the comparator unit outputs the result of a comparison of the first pixel signal with the reference signal in the first period, and

the direction of the change of the reference signal with respect to the lapse of time is not changed until the end of the determination period from the start of the first period.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2019
From: SAITO, KAZUHIRO; ITANO, TETSUYA
To: CANON KABUSHIKI KAISHA
Reel/Frame 048222/0831 →
Priority Claims (1)
JP JP2017-230018 · Nov 30, 2017 · national
Continuity (1)
Related Publication 20190166323A1 · May 30, 2019