Apparatus and methods for low noise amplifiers with mid-node impedance networks
Apparatus and methods for LNAs with mid-node impedance networks are provided herein. In certain configurations, an LNA includes a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between an output terminal and the mid-node impedance circuit, and a transconductance device electrically connected between the mid-node impedance circuit and ground. The transconductance device amplifies a radio frequency signal received from an input terminal. The LNA further includes a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device.
1. A low noise amplifier comprising:
a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, the mid-node impedance circuit operable to decouple a gain and a reflection coefficient of the low noise amplifier;
a cascode device electrically connected between an output terminal and the mid-node impedance circuit;
a transconductance device electrically connected between the mid-node impedance circuit and ground, the transconductance device configured to amplify a radio frequency signal received from an input terminal; and
a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device.
2. The low noise amplifier of claim 1 wherein the transconductance device and the cascode device are bipolar transistors, the transconductance device having a base configured to receive the radio frequency signal and the input bias voltage.
3. The low noise amplifier of claim 2 wherein the resistor and the capacitor are electrically connected in parallel between an emitter of the cascode device and a collector of the transconductance device.
4. The low noise amplifier of claim 2 wherein the feedback bias circuit is further configured to bias the cascode device, the feedback bias circuit including a feedback resistor electrically connected between the output terminal and a base of the cascode device.
5. The low noise amplifier of claim 1 wherein the transconductance device and the cascode device are field-effect transistors, the transconductance device having a gate configured to receive the radio frequency signal and the input bias voltage.
6. The low noise amplifier of claim 5 wherein the resistor and the capacitor are electrically connected in parallel between a source of the cascode device and a drain of the transconductance device.
7. The low noise amplifier of claim 5 wherein the feedback bias circuit is further configured to bias the cascode device, the feedback bias circuit including a feedback resistor electrically connected between the output terminal and a gate of the cascode device.
8. The low noise amplifier of claim 1 wherein the mid-node impedance circuit further includes a shunt capacitor in shunt with respect to a radio frequency signal path through the transconductance device and the cascode device.
9. The low noise amplifier of claim 1 further comprising a bias current source and an inductor electrically connected in series between a supply voltage and the cascode device.
10. The low noise amplifier of claim 1 further comprising a degeneration inductor electrically connected between the transconductance device and ground.
11. A low noise amplifier comprising:
a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel;
a cascode device electrically connected between an output terminal and the mid-node impedance circuit;
a transconductance device electrically connected between the mid-node impedance circuit and ground, the transconductance device configured to amplify a radio frequency signal received from an input terminal;
a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device; and
a bias current source and an inductor electrically connected in series between a supply voltage and the cascode device, the bias current source including a p-type field-effect transistor and a proportional to absolute temperature circuit that controls a gate voltage of the p-type field-effect transistor such that a bias current outputted from the p-type field-effect transistor is substantially proportional to absolute temperature.
12. The low noise amplifier of claim 11 further comprising a degeneration inductor electrically connected between the transconductance device and ground.
13. The low noise amplifier of claim 11 wherein the transconductance device and the cascode device are bipolar transistors, the transconductance device having a base configured to receive the radio frequency signal and the input bias voltage.
14. The low noise amplifier of claim 13 wherein the resistor and the capacitor are electrically connected in parallel between an emitter of the cascode device and a collector of the transconductance device.
15. A packaged module comprising:
a package substrate; and
a semiconductor die attached to the package substrate and including a low noise amplifier fabricated thereon, the low noise amplifier including a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between an output terminal and the mid-node impedance circuit, a transconductance device electrically connected between the mid-node impedance circuit and ground and configured to amplify a radio frequency signal received from an input terminal, and a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device, the mid-node impedance operable to decouple a gain and a reflection coefficient of the low noise amplifier.
16. The packaged module of claim 15 wherein the mid-node impedance circuit further includes a shunt capacitor in shunt with respect to a radio frequency signal path through the transconductance device and the cascode device.
17. The packaged module of claim 15 further comprising a bias current source and an inductor electrically connected in series between a supply voltage and the cascode device.
18. A mobile device comprising:
an antenna;
a front end system including a low noise amplifier having an input terminal configured to receive a radio frequency signal from the antenna and an output terminal configured to output an amplified radio frequency signal, the low noise amplifier including a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between the output terminal and the mid-node impedance circuit, a transconductance device electrically connected between the mid-node impedance circuit and ground and configured to amplify the radio frequency signal, and a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device, the mid-node impedance operable to decouple a gain and a reflection coefficient of the low noise amplifier; and
a transceiver configured to receive the amplified radio frequency signal.
19. The mobile device of claim 18 wherein the mid-node impedance circuit further includes a shunt capacitor in shunt with respect to a radio frequency signal path through the transconductance device and the cascode device.
20. The mobile device of claim 18 further comprising a bias current source and an inductor electrically connected in series between a supply voltage and the cascode device.