Qubit tuning by magnetic fields in superconductors
An embodiment of a qubit tuning device includes a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range. In an embodiment, the qubit tuning device includes a qubit of a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.
1. A device comprising:
a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range;
a qubit of a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value; and
a heating element configured to heat a portion of the first layer above a critical temperature.
2. The device of claim 1 , further comprising:
a magnetic element configured to apply a magnetic field to the first layer.
3. The device of claim 2 , wherein the heating element is a resistor.
4. The device of claim 2 , wherein the heating element is a light source.
5. The device of claim 2 , the magnetic element comprising:
a wire of a superconducting material, the wire being formed into a coil structure.
6. The device of claim 2 , wherein the heating element is one of a plurality of heating elements, each heating element configured to heat a corresponding portion of the first layer above a critical temperature.
7. The device of claim 6 , wherein each portion of the first layer is configured to magnetically interact with a corresponding qubit of a plurality of qubits of the quantum processor such that a magnetic flux of each portion causes a change in a resonance frequency of the corresponding qubit.
8. The device of claim 1 , wherein the first layer produces the first magnetic flux while operating in a range of temperatures between 20 Kelvin and 0.01 Kelvin, inclusive of both ends of the range.
9. The device of claim 1 , further comprising:
a second layer configured to generate a magnetic field, the second layer comprising a material exhibiting superconductivity in a cryogenic temperature range.
10. The device of claim 1 , further comprising:
a magnetic element disposed on a surface of a chip, wherein the first layer is formed on an opposite surface of the chip.
11. The device of claim 1 , wherein the qubit is formed on a first surface of the quantum processor chip; and
wherein the first layer is formed on an opposite surface of the quantum processor chip.
12. The device of claim 1 , further comprising:
a magnetic element configured to apply a magnetic field to the first layer, the magnetic element disposed on a first chip; and
wherein the first layer is disposed on a second chip.
13. A method to fabricate a qubit tuning device, the method comprising:
forming a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range;
forming a qubit on a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value; and
heating, using a heating element, a portion of the first layer above a critical temperature.
14. The method of claim 13 , further comprising:
forming a second layer configured to generate a magnetic field, the second layer comprising a material exhibiting superconductivity in a cryogenic temperature range.
15. The method of claim 13 , wherein the first layer produces the first magnetic flux while operating in a range of temperatures between 20 Kelvin and 0.01 Kelvin, inclusive of both ends of the range.
16. The method of claim 13 , further comprising:
disposing a magnetic element on a surface of a chip, wherein the first layer is formed on an opposite surface of the chip.
17. The method of claim 13 , wherein the qubit is formed on a first surface of the quantum processor chip; and
wherein the first layer is formed on an opposite surface of the quantum processor chip.
18. A superconductor fabrication system which when operated to fabricate a qubit tuning device performs operations comprising:
forming a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range;
forming a qubit on a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value; and
heating, using a heating element, a portion of the first layer above a critical temperature.
19. The superconductor fabrication system of claim 18 , the operations further comprising:
forming a second layer configured to generate a magnetic field, the second layer comprising a material exhibiting superconductivity in a cryogenic temperature range.
20. The superconductor fabrication system of claim 18 , the operations further comprising:
disposing a magnetic element on a surface of a chip, wherein the first layer is formed on an opposite surface of the chip.