Nonvolatile memory device having a vertical structure and a memory system including the same
A nonvolatile memory device including: a first semiconductor layer including word lines, bit lines, first and second upper substrates adjacent to each other and a memory cell array, wherein the memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate; and a second semiconductor layer under the first semiconductor layer, wherein the second semiconductor layer includes a lower substrate that includes row decoder and page buffer circuits, wherein the first vertical structure includes a first via area in which a first through-hole via is provided, wherein the first through-hole via passes through the first vertical structure and connects a first bit line and a first page buffer circuit, and the second vertical structure includes a first partial block, wherein the first partial block overlaps the first via area.
1. A nonvolatile memory device, comprising:
a first semiconductor layer comprising a first upper substrate and a second upper substrate adjacent to each other in a first direction and a memory cell array that comprises a plurality of memory blocks arranged in a second direction and first and second vertical structures, the first vertical structure comprising a plurality of first gate conductive layers stacked on the first upper substrate and a plurality of first pillars that pass through the first gate conductive layers and extend in a third direction perpendicular to the first and second directions, the second vertical structure comprising a plurality of second gate conductive layers stacked on the second upper substrate and a plurality of second pillars that pass through the second gate conductive layers and extend in the third direction; and
a second semiconductor layer located under the first semiconductor layer in the third direction, wherein the second semiconductor layer comprises a lower substrate that comprises a plurality of row decoder circuits and a plurality of page buffer circuits,
wherein the first vertical structure further comprises a first via area in which a first through-hole via passes through the first vertical structure and is connected to a first page buffer circuit, and a first partial block spaced apart from the first via area in the second direction, and
the second vertical structure further comprises a second via area in which a second through-hole via passes through the second vertical structure and is connected to a second page buffer circuit, and a second partial block spaced apart from the second via area in the second direction.
2. The nonvolatile memory device of claim 1 , wherein the first partial block overlaps the second via area in the first direction, and
the second partial block overlaps the first via area in the first direction.
3. The nonvolatile memory device of claim 1 , wherein the second semiconductor layer comprises first, second, third and fourth regions that are divided along the first and second directions, wherein at least one of the first, second, third and fourth regions overlaps the memory cell array,
wherein the first page buffer circuit is located in the first region and a second page buffer circuit is located in the third region.
4. The nonvolatile memory device of claim 3 , wherein the plurality of row decoder circuits comprise first and second row decoder circuits respectively located in the second and fourth regions,
wherein the second partial block is electrically connected to the first row decoder circuit, and the first partial block is electrically connected to the second row decoder circuit.
5. The nonvolatile memory device of claim 4 , further comprising a control circuit configured to control the first and second row decoder circuits to simultaneously access the first partial block and the second partial block.
6. The nonvolatile memory device of claim 4 , further comprising a control circuit configured to control the first and second row decoder circuits to independently access the first partial block and the second partial block.
7. The nonvolatile memory device of claim 1 , wherein the first partial block comprises a plurality of strings each comprising a plurality of memory cells stacked from the first upper substrate in the third direction.
8. The nonvolatile memory device of claim 1 , wherein the first partial block comprises a third through-hole via that passes through the plurality of first gate conductive layers in the third direction.
9. The nonvolatile memory device of claim 8 , wherein the second semiconductor layer further comprises a peripheral circuit electrically connected to the third through-hole via.
10. The nonvolatile memory device of claim 1 , wherein the first partial block is provided plural in number, and
the second partial block is provided plural in number,
wherein the number of the first partial blocks and the number of the second partial blocks are equal to each other.