IP Library Granted Patent US 10,785,431
Granted Patent B2
US 10,785,431 · App. 16/200,789 · Granted Sep 22, 2020

Image sensors having dark pixels and imaging pixels with different sensitivities

Inventors: Richard Scott Johnson (Boise, ID); Debashree Guruaribam (Boise, ID); Ross F. Jatou (San Jose, CA)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N5/359H04N5/35563
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Quick Facts
Patent No.
US 10,785,431
App. No.
16/200,789
Granted
Sep 22, 2020
Kind
B2
Abstract

An image sensor may include an array of imaging pixels. Each imaging pixel may include a first sub-pixel that is configured to generate a high light-sensitivity signal and a second sub-pixel that is configured to generate a low light-sensitivity signal. The image sensor may also include a plurality of dark pixels that are shielded from incident light and processing circuitry. The processing circuitry may be configured to, for each imaging pixel, compare a value based on at least one of the high light-sensitivity signal and the low light-sensitivity signal to a threshold, modify the high light-sensitivity signal for the respective imaging pixel based at least on the low light-sensitivity signal for the respective imaging pixel when the value is less than the threshold, and modify the high light-sensitivity signal for the respective imaging pixel based on at least one dark pixel signal when the value is greater than the threshold.

Claims (32)

1. An image sensor comprising:

an array of imaging pixels, wherein each imaging pixel includes a first sub-pixel that has a first sensitivity to incident light and a second sub-pixel that has a second sensitivity to the incident light, wherein the first sensitivity is higher than the second sensitivity; and

processing circuitry configured to correct a first signal from the first sub-pixel of a first imaging pixel based at least on a second signal from the second sub-pixel of the first imaging pixel, wherein the processing circuitry is configured to:

subtract the second signal from the first signal to produce a corrected first signal; and

determine a representative value for the first imaging pixel based on the corrected first signal and the second signal.

2. The image sensor defined in claim 1 , wherein the processing circuitry is configured to compare at least one of the first and second signals to a threshold, and wherein the processing circuitry is configured to correct the first signal based at least on the second signal in response to determining that the at least one of the first and second signals is less than the threshold.

3. The image sensor defined in claim 2 , further comprising:

a plurality of reference pixels that are shielded from the incident light.

4. The image sensor defined in claim 3 , wherein the processing circuitry is configured to correct a third signal from the first sub-pixel of a second imaging pixel based on a fourth signal from at least one of the plurality of reference pixels.

5. The image sensor defined in claim 4 , wherein the processing circuitry is configured to compare at least one of the third signal and a fifth signal from the second sub-pixel of the second imaging pixel to the threshold, and wherein the processing circuitry is configured to correct the third signal based on the fourth signal in response to determining that the at least one of the third and fifth signals is greater than the threshold.

6. The image sensor defined in claim 1 , wherein the processing circuitry is configured to correct the first signal based on an average signal value, wherein the average signal value is an average of signals from second sub-pixels of a plurality of the imaging pixels including the first imaging pixel, wherein the plurality of the imaging pixels is a square grid of imaging pixels, and wherein the first imaging pixel is at a center of the square grid of imaging pixels.

7. The image sensor defined in claim 1 , wherein the first sub-pixel of each imaging pixel surrounds the second sub-pixel of that imaging pixel.

8. The image sensor defined in claim 7 , wherein each imaging pixel is covered by a toroidal microlens that has an opening that overlaps the second sub-pixel of that imaging pixel.

9. The image sensor defined in claim 1 , further comprising:

a plurality of reference pixels that are shielded from the incident light, wherein the processing circuitry is configured to correct a third signal from the first sub-pixel of a second imaging pixel based on a fourth signal from at least one of the plurality of reference pixels.

10. An image sensor comprising:

a plurality of imaging pixels that are each configured to generate a high light-sensitivity signal and a low light-sensitivity signal;

a plurality of dark pixels that are each configured to generate a dark pixel signal; and

processing circuitry configured to, for each imaging pixel in the plurality of imaging pixels:

compare a value based on at least one of the high light-sensitivity signal and the low light-sensitivity signal to a threshold;

when the value is less than the threshold, modify the high light-sensitivity signal for the respective imaging pixel based at least on the low light-sensitivity signal for the respective imaging pixel; and

when the value is greater than the threshold, modify the high light-sensitivity signal for the respective imaging pixel based on at least one dark pixel signal.

11. The image sensor defined in claim 10 , wherein the value is an average of the high light-sensitivity signals for the respective imaging pixel and at least one additional imaging pixel adjacent to the respective imaging pixel.

12. The image sensor defined in claim 10 , wherein the value is an average of the low light-sensitivity signals for the respective imaging pixel and at least one additional imaging pixel adjacent to the respective imaging pixel.

13. The image sensor defined in claim 10 , wherein modifying the high light-sensitivity signal for the respective imaging pixel based on the at least one dark pixel signal comprises modifying the high light-sensitivity signal for the respective imaging pixel based on an average of all of the dark pixel signals.

14. The image sensor defined in claim 10 , wherein modifying the high light-sensitivity signal for the respective imaging pixel based at least on the low light-sensitivity signal for the respective imaging pixel comprises modifying the high light-sensitivity signal for the respective imaging pixel based on an average of the low light-sensitivity signals for the respective imaging pixel and at least one additional imaging pixel adjacent to the respective imaging pixel.

15. The image sensor defined in claim 10 , wherein each imaging pixel has a first sub-pixel having a first photosensitive area that generates the high light-sensitivity signal and a second sub-pixel having a second photosensitive area that is smaller than the first photosensitive area that generates the low light-sensitivity signal.

16. The image sensor defined in claim 15 , wherein the first and second sub-pixels of each imaging pixel are concentric.

17. A method of operating an image sensor that includes a plurality of imaging pixels with first and second photosensitive areas that generate charge in response to incident light, wherein the image sensor includes dark pixels that are shielded from the incident light, the method comprising:

determining if a level of the incident light is below a threshold for each imaging pixel; and

correcting a signal from the first photosensitive area of the respective imaging pixel based at least on a signal from the second photosensitive area of the respective imaging pixel when the level of the incident light is below the threshold for the respective imaging pixel; and

correcting a signal from the first photosensitive area of the respective imaging pixel based on an average of signals from the dark pixels when the level of the incident light is not below the threshold for the respective imaging pixel.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 048327, FRAME 0670 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064079/0001 →
SECURITY INTEREST Recorded Feb 13, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 048327/0670 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2019
From: JOHNSON, RICHARD SCOTT; GURUARIBAM, DEBASHREE; JATOU, ROSS F.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 048113/0591 →
Continuity (1)
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