Semiconductor device
A semiconductor device includes a semiconductor element, an insulated substrate on which the semiconductor element is located, and an external connection terminal electrically connected to the semiconductor element via the insulated substrate. The insulated substrate includes an insulator layer, an inner conductor layer located on one side of the insulator layer and electrically connected to the semiconductor device, and an outer conductor layer located on the other side of the insulator layer. The external connection terminal includes, along a longitudinal direction of the external connection terminal, a thin section and a thick section that is thicker than the thin section, and the external connection terminal is joined to the inner conductor layer of the insulated substrate at the thin section.
1. A semiconductor device comprising:
a semiconductor element;
an insulated substrate on which the semiconductor element is located; and
an external connection terminal electrically connected to the semiconductor element via the insulated substrate;
wherein the insulated substrate comprises an insulator layer, an inner conductor layer located on one side of the insulator layer and electrically connected to the semiconductor element, and an outer conductor layer located on the other side of the insulator layer
the external connection terminal comprises, along a longitudinal direction of the external connection terminal, a thin section and a thick section that is thicker than the thin section, and the external connection terminal is joined to the inner conductor layer of the insulated substrate at the thin section.
2. The semiconductor device according to claim 1 , wherein at least a part of the thick section of the external connection terminal and at least a part of the inner conductor layer of the insulated substrate are located in a common plane that is parallel to the insulated substrate.
3. The semiconductor device according to claim 2 , wherein a part of the thick section of the external connection terminal and at least a part of the insulator layer of the insulated substrate are located in a common plane that is parallel to the insulator substrate.
4. The semiconductor device according to claim 1 , wherein a thickness of the thin section of the external connection terminal is smaller than a thickness of the inner conductor layer of the insulated substrate.
5. The semiconductor device according to claim 1 , further comprising an encapsulant encapsulating the semiconductor element,
wherein the thin section of the external connection terminal is located within the encapsulant and the thick section of the external connection terminal extends from the thin section to outside the encapsulant.
6. The semiconductor device according to claim 5 , wherein the outer conductor layer of the insulated substrate is exposed on a surface of the encapsulant.
7. The semiconductor device according to claim 6 , further comprising a second insulated substrate opposed to the insulated substrate with the semiconductor device interposed,
wherein the second insulated substrate comprises a second insulator layer, a second inner conductor layer located on one side of the second insulator layer and electrically connected to the semiconductor element, and a second outer conductor layer located on the other side of the second insulator layer, and
the second outer conductor layer of the second insulated substrate is exposed on a surface of the encapsulant.
8. The semiconductor device according to claim 7 , further comprising a second external connection terminal electrically connected to the semiconductor element via the second insulated substrate,
wherein the second external connection terminal comprises, along a longitudinal direction of the second external connection terminal, a thin section and a thick section that is thicker than the thin section, and the second external connection terminal is joined to the second inner conductor layer of the second insulated substrate at the thin section.
9. The semiconductor device according to claim 8 , wherein at least a part of the thick section of the second external connection terminal and at least a part of the second inner conductor layer of the second insulated substrate are located in a common plane that is parallel to the second insulated substrate.
10. The semiconductor device according to claim 9 , wherein a part of the thick section of the second external connection terminal and at least a part of the second insulator layer of the second insulated substrate are located in a common plane that is parallel to the second insulated substrate.
11. The semiconductor device according to claim 8 , wherein a thickness of the thin section of the second external connection terminal is smaller than a thickness of the second inner conductor layer of the second insulated substrate.
12. The semiconductor device according to claim 8 , wherein the thin section of the second external connection terminal is located within the encapsulant and the thick section of the second external connection terminal extends from the thin section to outside the encapsulant.