IP Library Granted Patent US 11,079,282
Granted Patent B2
US 11,079,282 · App. 16/202,953 · Granted Aug 3, 2021

Flexible interconnect sensing devices and related methods

Inventors: Irfan Rahim (Milpitas, CA); Oswald L. Skeete (Phoenix, AZ); Ross F. Jatou (San Jose, CA)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
G01J5/20H01L27/14636H01L27/14643H01L27/14689H04N5/33
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Quick Facts
Patent No.
US 11,079,282
App. No.
16/202,953
Granted
Aug 3, 2021
Kind
B2
Abstract

Implementations of sensing devices may include a plurality of electromagnetic radiation sensing sections coupled to a flexible interconnect and one or more digital sections coupled to the flexible interconnect. The plurality of electromagnetic radiation sensing sections may be self-aligned through the flexible interconnect.

Claims (15)

1. A method of forming an electromagnetic radiation (EMR) sensing device comprising:

forming a plurality of EMR sensing die in a first side of substrate;

forming a trench partially through the substrate from the first side of the substrate through removing a portion of the substrate between two EMR sensing die of the plurality of EMR sensing die;

coupling a support layer to the first side of the substrate;

singulating the plurality of EMR sensing die through thinning a second side of the substrate opposite the first side of the substrate;

coupling the second side of the substrate to a flexible interconnect;

removing at least a portion of the support layer to fully singulate the plurality of EMR sensing die; and

bending the flexible interconnect at portions of the flexible interconnect corresponding with a location of the trench.

2. The method of claim 1 , wherein the substrate comprises an EMR sensing layer hybrid bonded to an analog layer, wherein the first side of the substrate comprises a side of the EMR sensing layer and the second side of the substrate comprises a side of the analog layer.

3. The method of claim 2 , further comprising forming a through-silicon-via at least partially through the analog layer and exposing the through-silicon-via when thinning the second side of the substrate.

4. The method of claim 1 , further comprising forming the trench through patterning a photoresist layer over the first side of the substrate and etching into the first side of the substrate.

5. The method of claim 1 , wherein the plurality of EMR sensing die each comprise a non-rectangular perimeter.

6. The method of claim 1 , further comprising coupling a digital section to the flexible interconnect.

7. The method of claim 1 , wherein the EMR sensing device comprises a complimentary metal-oxide semiconductor image sensor.

8. The method of claim 1 , further comprising forming the flexible interconnect into a tube shape.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 048327, FRAME 0670 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064079/0001 →
SECURITY INTEREST Recorded Feb 13, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 048327/0670 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2019
From: RAHIM, IRFAN; SKEETE, OSWALD L.; JATOU, ROSS F.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 048121/0365 →