IP Library Granted Patent US 10,854,697
Granted Patent B2
US 10,854,697 · App. 16/204,102 · Granted Dec 1, 2020

Display device and method for manufacturing the same

Inventors: Shunpei Yamazaki (Setagaya, JP); Masakatsu Ohno (Utsunomiya, JP); Hiroki Adachi (Tochigi, JP); Satoru Idojiri (Tochigi, JP); Koichi Takeshima (Sano, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/3272B23K26/04B23K26/0617B23K26/0622B23K26/0643B23K26/0648B23K26/083H01L27/1225H01L27/1266H01L27/322H01L27/3258H01L27/3262H01L29/24H01L29/66969H01L29/7869H01L29/78603H01L51/003H01L51/0024H01L51/0027H01L51/0097H01L51/5246H01L51/5253H01L51/56H01L27/3244H01L41/314H01L51/5096H01L51/5284H01L2227/323H01L2227/326H01L2251/5338H01L2251/558Y02E10/549Y02P70/521
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Quick Facts
Patent No.
US 10,854,697
App. No.
16/204,102
Granted
Dec 1, 2020
Kind
B2
Abstract

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Claims (50)

1. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer over the first substrate, a transistor over the organic resin layer, an EL element over the transistor, a second substrate over the EL element, and a plurality of insulating layers and a sealing layer comprising a resin material between the EL element and the second substrate; and

separating the first substrate from the stacked body by irradiating the organic resin layer with a laser light through the first substrate.

2. The method for manufacturing a display device according to claim 1 , wherein the step of separating the first substrate from the stacked body is performed while injecting a liquid into an interface between the first substrate and the organic resin layer.

3. The method for manufacturing a display device according to claim 2 , wherein the liquid is water.

4. The method for manufacturing a display device according to claim 1 , further comprising a layer between the organic resin layer and the transistor,

wherein the layer has a stacked structure, and

wherein the layer comprises any one of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide.

5. The method for manufacturing a display device according to claim 1 , wherein the organic resin layer comprises a polyimide resin.

6. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer over the first substrate, a transistor over the organic resin layer, an EL element over the transistor, a second substrate over the EL element, and a sealant which bonds the first substrate to the second substrate and surrounds a pixel portion comprising the transistor and the EL element; and

separating the first substrate from the stacked body by irradiating the organic resin layer with a laser light through the first substrate.

7. The method for manufacturing a display device according to claim 6 , further comprising a sealing layer comprising a resin material between the EL element and the second substrate, wherein the sealant surrounds the sealing layer.

8. The method for manufacturing a display device according to claim 6 , further comprising a layer between the organic resin layer and the transistor,

wherein the layer has a stacked structure, and

wherein the layer comprises any one of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide.

9. The method for manufacturing a display device according to claim 6 , wherein the organic resin layer comprises a polyimide resin.

10. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer over the first substrate, a transistor over the organic resin layer, an EL element over the transistor, a second substrate over the EL element, and a sealant which bonds the first substrate to the second substrate and surrounds a pixel portion comprising the transistor and the EL element;

irradiating the organic resin layer with a laser light through the first substrate; and

separating the first substrate from the stacked body by rotation of a roller overlapping with the stacked body after the step of irradiating the organic resin layer with the laser light.

11. The method for manufacturing a display device according to claim 10 , further comprising a sealing layer comprising a resin material between the EL element and the second substrate, wherein the sealant surrounds the sealing layer.

12. The method for manufacturing a display device according to claim 10 , further comprising a layer between the organic resin layer and the transistor,

wherein the layer has a stacked structure, and

wherein the layer comprises any one of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide.

13. The method for manufacturing a display device according to claim 10 , wherein the organic resin layer comprises a polyimide resin.

14. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer formed as a single layer over the first substrate, a silicon oxide layer over and in contact with the organic resin layer, a transistor over the silicon oxide layer, an EL element over the transistor, and a sealing layer over the EL element;

separating the first substrate from the organic resin layer by irradiating the organic resin layer with a laser light through the first substrate; and

bonding a flexible substrate to the organic resin layer with a bonding layer interposed between the flexible substrate and the organic resin layer,

wherein, after the bonding, the organic resin layer in the display device is a single layer in contact with the silicon oxide layer and the bonding layer.

15. The method for manufacturing a display device according to claim 14 , wherein the step of separating the first substrate from the organic resin layer is performed while injecting a liquid into an interface between the first substrate and the organic resin layer.

16. The method for manufacturing a display device according to claim 15 , wherein the liquid is water.

17. The method for manufacturing a display device according to claim 14 , wherein the organic resin layer comprises a polyimide resin.

18. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer formed as a single layer over the first substrate, a silicon oxide layer over and in contact with the organic resin layer, a transistor over the silicon oxide layer, an EL element over the transistor, and a sealing layer over the EL element;

separating the first substrate from the organic resin layer by irradiating the organic resin layer with a laser light outputted from a plurality of oscillators through the first substrate; and

bonding a flexible substrate to the organic resin layer with a bonding layer interposed between the flexible substrate and the organic resin layer,

wherein, after the bonding, the organic resin layer in the display device is a single layer in contact with the silicon oxide layer and the bonding layer.

19. The method for manufacturing a display device according to claim 18 , wherein the step of separating the first substrate from the organic resin layer is performed while injecting a liquid into an interface between the first substrate and the organic resin layer.

20. The method for manufacturing a display device according to claim 19 , wherein the liquid is water.

21. The method for manufacturing a display device according to claim 18 , wherein the organic resin layer comprises a polyimide resin.

22. A method for manufacturing a display device, the method comprising the steps of:

preparing a stacked body comprising a first substrate, an organic resin layer formed as a single layer over the first substrate, a silicon oxide layer over and in contact with the organic resin layer, an insulating layer over the silicon oxide layer, a semiconductor layer over and in contact with the insulating layer, an EL element over the semiconductor layer, and a sealing layer over the EL element;

separating the first substrate from the organic resin layer by irradiating the organic resin layer with a laser light through the first substrate; and

bonding a flexible substrate to the organic resin layer with a bonding layer interposed between the flexible substrate and the organic resin layer,

wherein, after the bonding, the organic resin layer in the display device is a single layer in contact with the silicon oxide layer and the bonding layer.

23. The method for manufacturing a display device according to claim 22 , wherein the step of separating the first substrate from the organic resin layer is performed while injecting a liquid into an interface between the first substrate and the organic resin layer.

24. The method for manufacturing a display device according to claim 23 , wherein the liquid is water.

25. The method for manufacturing a display device according to claim 22 , wherein the organic resin layer comprises a polyimide resin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2020
From: YAMAZAKI, SHUNPEI; OHNO, MASAKATSU; ADACHI, HIROKI; IDOJIRI, SATORU; TAKESHIMA, KOICHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 052821/0288 →
Priority Claims (4)
JP 2013-249631 · Dec 2, 2013 · national
JP 2013-256872 · Dec 12, 2013 · national
JP 2013-272176 · Dec 27, 2013 · national
JP 2014-047348 · Mar 11, 2014 · national
Continuity (5)
Continuation 15894117 · Feb 12, 2018
Continuation 15416166 · Jan 26, 2017
Continuation 15145246 · May 3, 2016
Continuation 14553251 · Nov 25, 2014
Related Publication 20190096977A1 · Mar 28, 2019