Display device and method for manufacturing the same

1. A display device, comprising:

a substrate;

a semiconductor layer on the substrate;

a gate insulating pattern on the semiconductor layer;

a plurality of gate electrodes on the gate insulating pattern; and

a thin-film transistor spaced apart from the gate insulating pattern, the thin-film transistor comprising:

a source electrode contacting the top surface of the semiconductor layer;

a source-drain electrode adjacent to the source electrode, a first of the plurality of gate electrodes being between the source-drain electrode and the source electrode; and

a drain electrode adjacent to the source-drain electrode, a second of the plurality of gate electrodes being between the drain electrode and the source-drain electrode.

2. The display device of claim 1 , wherein the gate insulating pattern is only under the plurality of gate electrodes.

3. The display device of claim 1 , wherein the semiconductor layer comprises:

a first region; and

a second region having a thickness less than that of the first region.

4. The display device of claim 3 , wherein the first region of the semiconductor layer overlaps the gate electrodes, the source electrode, the source-drain electrode, and the drain electrode.

5. The display device of claim 3 , wherein the second region of the semiconductor layer is between the source electrode and the gate electrodes, between the gate electrodes and the source-drain electrode, and between the gate electrodes and the drain electrode.

6. The display device of claim 3 , wherein the thickness of the second region is 30% to 70% of the thickness of the first region.

7. The display device of claim 3 , wherein the first region of the semiconductor layer overlapping the gate insulating pattern is larger in size than the gate insulating pattern.

8. The display device of claim 1 , wherein the thin-film transistor is in a gate-in-panel (GIP) driver of the display device.

9. The display device of claim 1 , wherein the gate electrodes, the source electrode, the source-drain electrode, and the drain electrode comprise a gate electrode material.

10. A method for manufacturing a display device, the method comprising:

providing a semiconductor layer on a substrate;

providing a gate insulating film on the semiconductor layer;

depositing a gate electrode material on the substrate where the gate insulating film is provided;

forming a plurality of gate electrodes using a single mask;

providing a source electrode in contact with a first side of the semiconductor layer;

providing a drain electrode in contact with a second side of the semiconductor layer; and

providing a source-drain electrode between each of the plurality of gate electrodes.

11. The method of claim 10 , further comprising:

forming contact holes exposing part of the semiconductor layer in the gate insulating film,

wherein the source electrode, the drain electrode, and the source-drain electrode contact the semiconductor layer via the contact holes.

12. The method of claim 10 , further comprising:

forming a gate insulating pattern overlapping the gate electrodes by etching the gate insulating film using the gate electrodes as a mask; and

removing the gate insulating film, except for the gate insulating pattern.

13. The method of claim 12 , wherein, in the forming of the gate insulating pattern:

the regions where the gate insulating film is etched are first regions; and

the regions where the contact holes are located are second regions.

14. The method of claim 13 , wherein the second regions have a thickness less than that of the first regions.