Antenna formation by integrated metal layer or redistribution layer
Systems and methods of manufacture are disclosed for a semiconductor device having an integral antenna. The semiconductor device includes a substrate having a plurality of metal layers within the substrate with the plurality of metal layers being adjacent to an active side of the substrate. An antenna structure is formed on one of metal layers. The antenna structure may be configured to be connected to an external device. The substrate may include a redistribution layer connected to the active side of the substrate. The antenna structure may be formed in the redistribution layer instead of being formed on one of the metal layers. The area of the antenna structure may be configured to enable a device connected to the antenna structure to operate on a communication network. The antenna structure may be configured to be a 5G network antenna.
1. A semiconductor device comprising:
a substrate having a first side and a second side opposite to the first side;
a plurality of metal layers within the substrate, the plurality of metal layers adjacent to the first side of the substrate; and
an antenna structure formed on one of the metal layers, wherein the antenna structure is configured to be connected to an external device, wherein the first side of the substrate is an active surface of the semiconductor device.
2. The semiconductor device of claim 1 wherein the antenna structure is a 5G millimeter wave antenna.
3. The semiconductor device of claim 1 , wherein the first side of the substrate has a first area and the antenna structure has a second area, wherein the second area is at least 10% or more of the first area.
4. A semiconductor device comprising:
a substrate having a first side and a second side opposite to the first side;
a plurality of metal layers within the substrate, the plurality of metal layers adjacent to the first side of the substrate; and
an antenna structure formed on one of the metal layers, wherein the antenna structure is configured to be connected to an external device, wherein antenna structure comprises a plurality of perforations.
5. A semiconductor device comprising:
a substrate having a first side and a second side opposite to the first side;
a plurality of metal layers within the substrate, the plurality of metal layers adjacent to the first side of the substrate; and
an antenna structure formed on one of the metal layers, wherein the antenna structure is configured to be connected to an external device, wherein the substrate comprises a silicon substrate.
6. A semiconductor device comprising:
a substrate having a first side and a second side opposite to the first side;
a redistribution layer connected to the first side of the substrate, the redistribution layer configured to connect the substrate to an external device; and
an antenna structure formed in the redistribution layer, the substrate is connected to the antenna structure through the redistribution layer.
7. The semiconductor device of claim 6 , wherein the redistribution layer is configured to connect the antenna structure to the external device.
8. The semiconductor device of claim 6 , wherein the antenna structure is a 5G millimeter wave antenna.
9. The semiconductor device of claim 6 , wherein the first side of the substrate is an active surface of the semiconductor device.
10. A semiconductor device assembly comprising:
a semiconductor device, the semiconductor device comprising a plurality of metal layers within the semiconductor device,
an antenna structure that positioned within the semiconductor device, wherein the antenna structure is formed on one of the plurality of metal layers; and
an external device connected to the antenna structure.
11. The semiconductor device assembly of claim 10 , wherein the external device comprises a radio communication device.
12. A semiconductor device assembly comprising:
a semiconductor device, the semiconductor device comprising a redistribution layer formed on a surface of the semiconductor device;
an antenna structure that positioned within the semiconductor device, wherein the antenna structure is formed within the redistribution layer; and
an external device connected to the antenna structure.
13. The semiconductor device assembly of claim 12 , wherein the external device is connected to both the semiconductor device and the antenna structure via the redistribution layer.
14. A method for making a semiconductor device assembly, the method comprising:
providing a substrate having an active side and an inactive side
forming a plurality of metal layers within the substrate adjacent to the active side of the substrate; and
forming an antenna structure on one of the plurality of metal layers.
15. The method of claim 14 , connecting the antenna structure to a device external to the substrate.