IP Library Granted Patent US 10,763,402
Granted Patent B2
US 10,763,402 · App. 16/209,992 · Granted Sep 1, 2020

Light-emitting diode package

Inventors: Shang-Hsun Tsai (Hsinchu, TW); Li-Wei Liu (Miaoli County, TW)
Assignee: Lextar Electronics Corporation
H01L33/505H01L25/0753H01L33/60H01L33/62
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,763,402
App. No.
16/209,992
Granted
Sep 1, 2020
Kind
B2
Abstract

A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.

Claims (12)

1. A light-emitting diode package comprising:

a substrate;

at least one light-emitting chip disposed on the substrate;

a light-reflective layer disposed around the light-emitting chip; and

a wave-length conversion fluorescent layer disposed over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by at least one groove of which the light-reflective layer and the fluorescent wave-length coversion layer define two opposite sidewalls, the at least one groove reaches two opposite sides of the light-emitting diode package.

2. The light-emitting diode package of claim 1 , wherein a thermal expansion coefficient of the light-reflective layer is different from that of the wave-length conversion fluorescent layer.

3. The light-emitting diode package of claim 1 , wherein the groove has a width ranging from 0.05 millimeter to 0.5 millimeter.

4. The light-emitting diode package of claim 1 , wherein the at least one groove comprises plural grooves formed between each edge of the wave-length conversion fluorescent layer and the light-reflective layer respectively.

5. The light-emitting diode package of claim 4 , wherein any immediately-adjacent two of the plural grooves are intersected.

6. The light-emitting diode package of claim 4 , wherein any opposite two of the plural grooves are in parallel with each other.

7. The light-emitting diode package of claim 1 , wherein the at least one light-emitting chip is electrically coupled to the substrate by a flip-chip manner.

8. The light-emitting diode package of claim 1 , wherein a top surface of the wave-length conversion fluorescent layer is level with a top surface of the light-reflective layer.

Assignments (2)
MERGER Recorded Mar 27, 2026
From: LEXTAR ELECTRONICS CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075286/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2018
From: TSAI, SHANG-HSUN; LIU, LI-WEI
To: LEXTAR ELECTRONICS CORPORATION
Reel/Frame 047685/0954 →