Semiconductor resist composition, and method of forming patterns using the composition
A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.
1. A semiconductor resist composition comprising:
an organometallic compound represented by Chemical Formula 1 and a solvent:
wherein, in Chemical Formula 1,
M 1 and M 2 are each independently selected from tin (Sn), indium (In), and antimony (Sb),
R 1 to R 6 are each independently selected from —OR a and —OC(═O)R b ,
R a and R b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and
L is a divalent linking group comprising at least one substituted or unsubstituted C1 to C20 alkylene group in a main chain.
2. The semiconductor resist composition of claim 1 , wherein the main chain in L further comprises a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, —O—, —C(═O)—, or a combination thereof.
3. The semiconductor resist composition of claim 1 , wherein L is selected from a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 alkenylene group, a substituted or unsubstituted C3 to C20 alkynylene group, and a substituted or unsubstituted C1 to C10 alkyleneoxy group.
4. The semiconductor resist composition of claim 1 , wherein R a and R b are each independently selected from a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group.
5. The semiconductor resist composition of claim 1 , wherein both M 1 and M 2 are Sn.
6. The semiconductor resist composition of claim 1 , wherein the organometallic compound is represented by at least one of Chemical Formula 2 to Chemical Formula 4:
wherein, in Chemical Formula 2 to Chemical Formula 4,
R 11 to R 16 , R 21 to R 26 , and R 31 to R 36 are each independently selected from a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, and a substituted or unsubstituted C6 to C30 arylalkyl group, and
L is a divalent linking group comprising at least one substituted or unsubstituted C1 to C20 alkylene group in the main chain.
7. The semiconductor resist composition of claim 6 , wherein L is selected from a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 alkenylene group, a substituted or unsubstituted C3 to C20 alkynylene group, and a substituted or unsubstituted C1 to C10 alkyleneoxy group.
8. The semiconductor resist composition of claim 1 , wherein the organometallic compound is represented by at least one of Chemical Formula 5 to Chemical Formula 12:
9. The semiconductor resist composition of claim 1 , wherein the composition further comprises a surfactant, a cross-linking agent, a leveling agent, or a combination thereof.
10. The semiconductor resist composition of claim 9 , wherein the surfactant is selected from an alkyl benzene sulfonate salt, an alkyl pyridinium salt, polyethylene glycol, a quaternary ammonium salt, and combinations thereof.
11. The semiconductor resist composition of claim 9 , wherein the cross-linking agent is a melamine-based, substituted urea-based, or a polymer-based cross-linking agent.
12. The semiconductor resist composition of claim 1 , further comprising a silane coupling agent as an adherence enhancer.
13. A method of forming patterns, the method comprising:
coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer;
patterning the photoresist layer to form a photoresist pattern; and
etching the etching subject layer using the photoresist pattern as an etching mask.
14. The method of claim 13 , wherein the photoresist pattern is formed using light in a wavelength of about 5 nm to about 150 nm.
15. The method of claim 13 , wherein the etching subject layer is provided on a substrate.
16. The method of claim 15 , further comprising providing a resist underlayer between the substrate and the photoresist layer.
17. The method of claim 13 , further comprising:
drying the coated semiconductor resist composition at about 80° C. to about 120° C., and
curing the patterned photoresist layer at 90° C. to about 200° C.
18. The method of claim 13 , wherein the photoresist pattern has a width of about 5 nm to about 100 nm.
19. The method of claim 13 , wherein the photoresist pattern is formed using an extreme ultraviolet (EUV) light source of a wavelength of about 13.5 nm.
20. A system of forming patterns, the system comprising:
means for coating the semiconductor resist composition of claim 1 on an etching subject layer to form a photoresist layer;
means for patterning the photoresist layer to form a photoresist pattern; and
means for etching the etching subject layer using the photoresist pattern as an etching mask.