Integrated assemblies having body contact regions proximate transistor body regions; and methods utilizing bowl etches during fabrication of integrated assemblies
Some embodiments include an integrated assembly having a semiconductor-containing structure with a body region vertically between an upper region and a lower region. The upper region includes a first source/drain region. The lower region is split into two legs which are both joined to the body region. One of the legs includes a second source/drain region and the other of the legs includes a body contact region. The first and second source/drain regions are of a first conductivity type, and the body contact region is of a second conductivity type which is opposite to the first conductivity type. An insulative material is adjacent to the body region. A conductive gate is adjacent to the insulative material. A transistor includes the semiconductor-containing structure, the conductive gate and the insulative material. Some embodiments include methods of forming integrated assemblies.
1. An integrated assembly, comprising:
a semiconductor-containing structure having a body region vertically between an upper region and a lower region; the upper region comprising a first source/drain region; the lower region being split into two legs which are both joined to the body region; one of the two legs including a second source/drain region, and the other of the two legs including a body contact region; the first and second source/drain regions being of a first conductivity type and the body contact region being of a second conductivity type; one of the first and second conductivity types being n-type and the other being p-type;
an insulative material adjacent the body region;
a conductive gate adjacent the insulative material and spaced from the body region by the insulative material; and
the semiconductor-containing structure, the conductive gate and the insulative material being included within a transistor.
2. The integrated assembly of claim 1 comprising a charge-storage device coupled with the first source/drain region, comprising a digit line coupled with the second source/drain region, and comprising a wordline coupled with the conductive gate; the charge-storage device and the transistor being included within a memory structure.
3. The integrated assembly of claim 2 wherein the memory structure is one of many memory structures which are substantially identical to one another and which are included within a memory array; and wherein the body contact regions of the memory structures are coupled with a reference voltage.
4. The integrated assembly of claim 3 wherein the transistors of the memory structures are n-channel devices; and wherein the reference voltage replenishes holes within the body regions.
5. The integrated assembly of claim 1 wherein the first conductivity type is n-type and the second conductivity type is p-type.
6. The integrated assembly of claim 1 wherein the first conductivity type is p-type and the second conductivity type is n-type.
7. The integrated assembly of claim 1 wherein the semiconductor-containing structure comprises monocrystalline silicon.
8. The integrated assembly of claim 1 wherein the two legs are a first leg and a second leg, with the second leg comprising the second source/drain region and with the first leg comprising the body contact region; wherein the first and second legs comprise planarized bottom surfaces which are coplanar with one another.
9. The integrated assembly of claim 8 wherein the first and second legs comprise top regions which join with the body region, and comprise bottom regions vertically offset from the top regions; and wherein the bottom region of the first leg is laterally spaced from the bottom region of the second leg by an intervening region comprising silicon dioxide.