Rigid high power and high speed lasing grid structures
Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure.
1. An apparatus comprising:
an electrical waveguide;
an epitaxial material comprising a mesa structure, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure, and wherein the epitaxial material does not include a plurality of mesa structures;
a substrate;
a contact layer that extends beneath the mesa structure and is positioned above the substrate; and
a structure separated from and around a periphery of the mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;
wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact; and
wherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions.
2. The apparatus of claim 1 wherein the epitaxial material, the structure, the contact layer, and the substrate are part of a laser array, and wherein the first and second contacts of the electrical waveguide connect to a single side of the laser array.
3. The apparatus of claim 2 wherein the laser array is a back emitting laser array.
4. The apparatus of claim 2 wherein the laser array is arranged as an emitter for a light detection and ranging (LiDaR) system.
5. The apparatus of claim 4 wherein the laser array further provides optical communication via the lasing produced from the laser regions.
6. The apparatus of claim 2 wherein the laser array further comprises a plurality of diffractive optical elements (DOEs), the DOEs adapted to collimate, diverge, direct, or homogenize light produced by the laser regions.
7. The apparatus of claim 6 wherein the DOEs comprise a plurality of microlenses.
8. The apparatus of claim 7 wherein the microlenses are adapted to provide a plurality of different pitches for the light produced by the laser regions.
9. The apparatus of claim 6 further comprising a macro lens that, in concert with the DOEs, is positioned and adapted to collimate the light produced by the laser regions with respect to a virtual point source behind the laser array.
10. The apparatus of claim 6 wherein the DOEs are positioned and adapted to direct the light produced by the laser regions to a convergence point in front of the laser array.
11. The apparatus of claim 1 wherein the contact layer has a thickness sufficient to carry the current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions.
12. The apparatus of claim 1 wherein the contact layer comprises an N contact layer, and wherein the apparatus further comprises:
a P contact layer on top of the mesa structure, and wherein the first contact of the electrical waveguide is in electrical connection with the P contact layer.
13. The apparatus of claim 1 wherein the structure is arranged as a ground structure for the apparatus.
14. The apparatus of claim 1 wherein the electrical waveguide comprises a ground-signal-ground (GSG) electrical waveguide.
15. The apparatus of claim 1 wherein the electrical waveguide comprises a microstrip or strip line electrical waveguide.
16. The apparatus of claim 1 wherein the epitaxial material is arranged as a vertical cavity surface emitting laser (VCSEL) epitaxial structure.
17. The apparatus of claim 1 wherein the epitaxial material is arranged as a vertical extended cavity surface emitting laser (VECSEL) epitaxial structure.
18. The apparatus of claim 1 further comprising:
a conductive frame around the epitaxial material that shorts the electrical waveguide second contact to the contact layer.
19. The apparatus of claim 18 wherein the conductive frame comprises a single metal frame.
20. The apparatus of claim 1 wherein a trench separates the epitaxial material from the structure.
21. The apparatus of claim 1 wherein the laser regions are arranged in a grid pattern on the epitaxial material.
22. The apparatus of claim 1 wherein the laser regions are arranged in a honeycomb pattern on the epitaxial material.
23. The apparatus of claim 1 wherein the laser regions are arranged in a circle pattern on the epitaxial material.
24. The apparatus of claim 1 wherein the structure includes the epitaxial material.
25. The apparatus of claim 1 wherein the structure surrounds an entirety of the periphery of the mesa structure.
26. An apparatus comprising:
an electrical waveguide;
an epitaxial material comprising a mesa structure, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure;
a substrate;
a contact layer that extends beneath the mesa structure and is positioned above the substrate; and
a structure separated from and around a periphery of the mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;
wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact
wherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions; and
wherein the mesa structure further comprises a plurality of holes extending therethrough, each hole having a layer of oxidation around it, the holes and the oxidation layers being positioned to define and electrically isolate the laser regions.
27. The apparatus of claim 26 wherein the epitaxial material comprises a plurality of mesa structures, wherein each mesa structure comprises a plurality of laser regions within that mesa structure itself, each laser region of that mesa structure being electrically isolated within that mesa structure itself relative to the other laser regions of that mesa structure.
28. The apparatus of claim 26 wherein the epitaxial material, the structure, the contact layer, and the substrate are part of a laser array, and wherein the first and second contacts of the electrical waveguide connect to a single side of the laser array.
29. The apparatus of claim 28 wherein the laser array is a back emitting laser array.
30. The apparatus of claim 26 wherein the contact layer has a thickness sufficient to carry the current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions.
31. The apparatus of claim 26 wherein the epitaxial material does not include a plurality of mesa structures.
32. An apparatus comprising:
an electrical waveguide;
an epitaxial material comprising a mesa structure, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure;
a substrate;
a contact layer that extends beneath the mesa structure and is positioned above the substrate; and
a structure separated from and around a periphery of the mesa structure, wherein the structure provides a contact that shorts the structure to the contact layer to provide a path for a current flow from the electrical waveguide to deliver energy to the laser regions;
wherein the electrical waveguide is configured to provide the current flow to the laser regions and the structure via a plurality of electrical waveguide contacts, the electrical waveguide contacts comprising a first contact for electrical connection with the laser regions and a second contact for electrical connection with the structure contact;
wherein the contact layer is adapted to carry a current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions; and
wherein the mesa structure further comprises a plurality of conductive regions formed by ion implantation, the ion implantation being positioned to define and electrically isolate the laser regions.
33. The apparatus of claim 32 wherein the epitaxial material, the structure, the contact layer, and the substrate are part of a laser array, and wherein the first and second contacts of the electrical waveguide connect to a single side of the laser array.
34. The apparatus of claim 33 wherein the laser array is a back emitting laser array.
35. The apparatus of claim 32 wherein the contact layer has a thickness sufficient to carry the current load from the electrical waveguide and spread current horizontally through the contact layer to the mesa structure including interior laser region portions of the mesa structure for injecting the laser regions with current to produce lasing from the laser regions.
36. The apparatus of claim 32 wherein the epitaxial material does not include a plurality of mesa structures.
37. The apparatus of claim 32 wherein the epitaxial material comprises a plurality of mesa structures, wherein each mesa structure comprises a plurality of laser regions within that mesa structure itself, each laser region of that mesa structure being electrically isolated within that mesa structure itself relative to the other laser regions of that mesa structure.