Management of corruptive read in memory systems
Described herein are embodiments related to one-direction error recovery flow (ERF) operations on memory components of memory systems. A processing device determines that data from a read operation is not successfully decoded because of a partial write of the data. The partial write results from a number of memory cells written as a first state and read as a second state. The processing device performs a one-direction ERF on the memory cells by monotonically adjusting a read voltage level for one or more re-read operations from a first discrete read voltage level towards a second read voltage level in a first direction until the data from the one or more re-read operations is successfully decoded. The first direction corresponds to an opposite direction of a state shift of the partial write. The processing device can also can determine a directional EBC and perform a refresh write if necessary.
1. A system comprising:
a memory component; and
a processing device, operatively coupled with the memory component, to:
issue a read operation with an initial read voltage level on a plurality of memory cells of the memory component;
determine that data from the read operation is not successfully decoded;
perform a one-direction error recovery flow (ERF) on the plurality of memory cells by monotonically adjusting a read voltage level applied to control gates of the plurality of memory cells for one or more re-read operations from a first read voltage level towards a second read voltage level until the data from the one or more re-read operations is successfully decoded;
calculate a directional error bit count (EBC), wherein the directional EBC indicates a number of the plurality of memory cells that are written as a first state and read as a second state; and
perform a refresh write of the data responsive to the directional EBC satisfying a directional EBC threshold criterion.
2. The system of claim 1 , wherein the processing device is further to:
select the read voltage level of a corresponding re-read operation of the one or more re-read operations that is successfully decoded; and
identify an occurrence of skew data corruption (SDC) in the data caused by characteristics in the plurality of memory cells.
3. The system of claim 2 , wherein selection of the read voltage level of the corresponding re-read operation widens a margin between the first state and the second state for one or more subsequent operations on the plurality of memory cells.
4. The system of claim 1 , wherein the processing device is further to use the directional EBC as an indicator of the SDC when the data is successfully decoded.
5. The system of claim 1 , wherein the one-direction ERF identifies an occurrence of skew data corruption (SDC) in the data caused by characteristics in the plurality of memory cells.
6. The system of claim 1 , wherein the first state is a low voltage (LV) state and the second state is a high voltage (HV) state.
7. The system of claim 1 , wherein the first state is a high voltage (HV) state and the second state is a low voltage (LV) state.
8. A method comprising:
issuing a read operation with an initial read voltage level on a plurality of memory cells of a memory component;
determining that data from the read operation is not successfully decoded;
performing a one-direction error recovery flow (ERF) on the plurality of memory cells by monotonically adjusting a read voltage level applied to control gates of the plurality of memory cells for one or more re-read operations from a first discrete read voltage level towards a second read voltage level until the data from the one or more re-read operations is successfully decoded;
calculating a directional error bit count (EBC), wherein the directional EBC indicates a number of the plurality of memory cells that are written as a first state and read as a second state; and
performing a refresh write of the data responsive to the directional EBC satisfying a directional EBC threshold criterion.
9. The method of claim 8 , further comprising:
selecting the read voltage level of a corresponding re-read operation of the one or more re-read operations that is successfully decoded; and
identifying an occurrence of skew data corruption (SDC) in the data caused by characteristics in the plurality of memory cells.
10. The method of claim 9 , wherein selecting the read voltage level of the read voltage level of the corresponding re-read operation widens a margin between the first state and the second state for one or more subsequent operations on the plurality of memory cells.
11. The method of claim 9 , further comprising using the directional EBC as an indicator of the SDC when the data is successfully decoded.
12. The method of claim 8 , wherein the one-direction ERF identifies an occurrence of skew data corruption (SDC) in the data caused by characteristics in the plurality of memory cells.
13. The method of claim 8 , wherein the first state is a low voltage (LV) state and the second state is a high voltage (HV) state.
14. The method of claim 8 , wherein the first state is a high voltage (HV) state and the second state is a low voltage (LV) state.
15. A non-transitory computer-readable storage medium storing instructions, which when executed by a processing device of a memory sub-system controller, cause the processing device to perform a plurality of operations comprising:
issuing a read operation with an initial read voltage level on a plurality of memory cells of a memory component;
determining that data from the read operation is not successfully decoded;
performing a one-direction error recovery flow (ERF) on the plurality of memory cells by monotonically adjusting a read voltage level applied to control gates of the plurality of memory cells for one or more re-read operations from a first discrete read voltage level towards a second read voltage level until the data from the one or more re-read operations is successfully decoded;
calculating a directional error bit count (EBC), wherein the directional EBC indicates a number of the plurality of memory cells that are written as a first state and read as a second state; and
performing a refresh write of the data responsive to the directional EBC satisfying a directional EBC threshold criterion.
16. The non-transitory computer-readable storage medium of claim 15 , wherein the plurality of operations further comprises:
selecting the read voltage level of a corresponding re-read operation of the one or more re-read operations that is successfully decoded; and
identifying an occurrence of skew data corruption (SDC) in the data caused by characteristics in the plurality of memory cells.
17. The non-transitory computer-readable storage medium of claim 15 , wherein the plurality of operations further comprises:
identifying an occurrence of skew data corruption (SDC) in the data using the directional EBC when the data is successfully decoded.