Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a method of manufacturing the solid-state imaging device. The present technique further relates to a solid-state imaging device that enables provision of an electronic apparatus that uses the solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus.
1. A light detecting device, comprising:
a semiconductor substrate having a first surface that receives incident light and a second surface opposite to the first surface;
a photoelectric conversion layer disposed in the semiconductor substrate;
a first insulating layer disposed on the first surface of the semiconductor substrate;
a second insulating layer disposed on the first insulating layer; and
a device isolation region at a periphery of the photoelectric conversion layer, the device isolation region including a metallic film that receives a predetermined voltage, wherein the metallic film extends beyond a surface of the second insulating layer that is closest to the incident light.
2. The light detecting device according to claim 1 , wherein the photoelectric conversion layer includes a first photoelectric conversion region and a second photoelectric conversion region.
3. The light detecting device according to claim 2 , wherein a portion of the device isolation region is disposed between the first and the second photoelectric conversion regions.
4. The light detecting device according to claim 3 , wherein the device isolation region further comprises a third insulating layer.
5. The light detecting device according to claim 4 , wherein the device isolation region further includes a film including a silicon material disposed on the metallic film.
6. The light detecting device according to claim 4 , wherein the third insulating layer comprises a metallic oxide film.
7. The light detecting device according to claim 4 , wherein the first insulating layer and the third insulating layer comprise fixed charge films.
8. The light detecting device according to claim 1 , wherein the device isolation region is in contact with a micro lens disposed on the second insulating layer.
9. The light detecting device according to claim 8 , wherein the device isolation region further includes a film including a silicon material in contact with the micro lens.
10. The light detecting device according to claim 1 , wherein the first insulating layer comprises a metallic oxide film.
11. The light detecting device according to claim 1 , wherein the second insulating layer comprises an oxide film.
12. The light detecting device according to claim 1 , wherein the metallic film comprises a tungsten material or an aluminum material.
13. An electronic apparatus, comprising:
an image processing circuit; and
light detecting device including:
a semiconductor substrate having a first surface that receives incident light and a second surface opposite to the first surface;
a photoelectric conversion layer disposed in the semiconductor substrate;
a first insulating layer disposed on the first surface of the semiconductor substrate;
a second insulating layer disposed on the first insulating layer; and
a device isolation region at a periphery of the photoelectric conversion layer, the device isolation region including a metallic film that receives a predetermined voltage, wherein the metallic film extends beyond a surface of the second insulating layer that is closest to the incident light.
14. The electronic apparatus according to claim 13 , wherein the photoelectric conversion layer includes a first photoelectric conversion region and a second photoelectric conversion region.
15. The electronic apparatus according to claim 14 , wherein a portion of the device isolation region is disposed between the first and the second photoelectric conversion regions.
16. The electronic apparatus according to claim 15 , wherein the device isolation region further comprises a third insulating layer.
17. The electronic apparatus according to claim 16 , wherein the device isolation region further includes a film including a silicon material disposed on the metallic film.
18. The electronic apparatus according to claim 13 , wherein the device isolation region is in contact with a micro lens disposed on the second insulating layer.
19. The electronic apparatus according to claim 18 , wherein the device isolation region further includes a film including a silicon material in contact with the micro lens.
20. The electronic apparatus according to claim 13 , wherein the first insulating layer comprises a metallic oxide film, wherein the second insulating layer comprises an oxide film, and wherein the metallic film comprises a tungsten material or an aluminum material.