Integrated circuit with asymmetric mirrored layout analog cells
View Patent ↗In a first integrated circuit column, a first cell active area top edge is separated by a first separation distance from a first barrier line, a first cell active area bottom edge is separated by a second separation distance from a second barrier line, a second cell active area top edge is separated by the second separation distance from a third barrier line, and a second active area bottom edge is separated by the first separation distance from a fourth barrier line. In a second column a third cell active area top edge is separated from a fifth barrier line by the first distance, and a third cell active area bottom edge is separated from a sixth barrier line by a third distance. The first and third separation distances are different from the second separation distance. The first barrier line aligns with the fifth barrier line.
1. An integrated circuit, comprising:
a first cell in a first column, the first cell having a first length in a first direction, a first barrier line at a first cell top end, a second barrier line at a first cell bottom end, a first cell active area between the first barrier line and the second barrier line, a first separation distance between a top edge of the first cell active area and the first barrier line, and a second separation distance between a bottom edge of the first cell active area and the second barrier line;
a second cell in the first column, the second cell having the first length in the first direction, a third barrier line at a second cell top end, a fourth barrier line at a second cell bottom end, and a second cell active area between the third barrier line and the fourth barrier line, the second separation distance between a top edge of the second cell active area and the third barrier line, and the first separation distance between a bottom edge of the second cell active area and the fourth barrier line;
a third cell in a second column, different from the first column, wherein the third cell has a second length in the first direction, the second length being different from the first length, a fifth barrier line at a third cell top end, a sixth barrier line at a third cell bottom end, and a third cell active area between the fifth barrier line and the sixth barrier line, the first separation distance between a top edge of the third cell active area and the fifth barrier line, and a third separation distance between a bottom edge of the third cell active area and the sixth barrier line, wherein
the first separation distance and the third separation distance are different from the second separation distance,
the first barrier line aligns, in the first direction, with the fifth barrier line, and
the fourth barrier line aligns, in the first direction, with the sixth barrier line.
2. The circuit of claim 1 , wherein the first separation distance equals the third separation distance.
3. The circuit of claim 1 , wherein the second separation distance is larger than the first separation distance.
4. The circuit of claim 1 , wherein the second separation distance is smaller than the first separation distance.
5. The circuit of claim 1 , wherein the third separation distance is larger than the first separation distance.
6. The circuit of claim 1 , wherein the third separation distance is smaller than the second separation distance.
7. The circuit of claim 1 , wherein the second cell length is twice the first cell length.
8. The circuit of claim 1 , wherein the first cell length is 1.5 times the second cell length.
9. The circuit of claim 1 , wherein the first separation distance, the second separation distance, and the third separation distance are different distances.
10. The circuit of claim 1 , further comprising a fourth cell in the second column, the fourth cell having the second length in the first direction, a seventh barrier line at a fourth cell top end, an eighth barrier line at a fourth cell bottom end, and a fourth cell active area between the seventh barrier line and the eighth barrier line, the third separation distance between a top edge of the fourth cell active area and the seventh barrier line, and the first separation distance between a bottom edge of the fourth cell active area and the eighth barrier line, wherein the first separation distance and the third separation distance are different form the second separation distance.
11. The circuit of claim 10 , wherein the first barrier line aligns with the fifth barrier line along the second direction, and the fourth barrier line aligns with the eighth barrier line along the second direction.