Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
1. An extreme ultraviolet (EUV) mask blank comprising:
an ultra-low expansion substrate;
a multi-layer stack over the ultra-low expansion substrate; and
an absorber layer, over the multi-layer stack, with a thickness of less than 80 nm and less than 2% reflectivity of an extreme ultraviolet (EUV) light at a wavelength of 13.5 nm, wherein the absorber layer includes a single layer of Nickel (Ni), Platinum (Pt), Silver (Ag), Zinc (Zn), Tin (Sn), Gold (Au), Lead (Pb), Indium (In), Hafnium (Hf), Cadmium (Cd), Bismuth (Bi), Antimony (Sb), or Tellurium (Te); and
an anti-reflective coating on the absorber layer, the anti-reflective coating selected from
tantalum oxynitride and tantalum boron oxide.
2. The extreme ultraviolet (EUV) mask blank of claim 1 , further comprising a capping layer formed on the multi-layer stack, the capping layer comprising at least one material selected from the group consisting of titanium nitride, boron carbide, and silicon carbide.
3. The extreme ultraviolet (EUV) mask blank of claim 1 , further comprising an additional multi-layer stack formed between the ultra-low expansion substrate and the absorber layer.
4. The extreme ultraviolet (EUV) mask blank of claim 1 , further comprising an additional multi-layer stack formed directly on a planarization layer and the multi-layer stack formed on the additional multi-layer stack.
5. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the absorber layer includes a single layer of Tin (Sn).
6. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the absorber layer includes a single layer of Lead (Pb).
7. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the absorber layer includes a single layer of Bismuth (Bi), Antimony (Sb), or Tellurium (Te).
8. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the absorber layer is in a range of 10 nm to 83 nm thick.
9. An extreme ultraviolet (EUV) mask blank system comprising:
an ultra-low expansion substrate;
a multi-layer stack over the ultra-low expansion substrate; and
an absorber layer, over the multi-layer stack, with a thickness of less than 80 nm and less than 2% reflectivity of an extreme ultraviolet (EUV) light at a wavelength of 13.5 nm, wherein the absorber layer includes a single layer of Nickel (Ni), Platinum (Pt), Silver (Ag), Zinc (Zn), Tin (Sn), Gold (Au), Lead (Pb), Indium (In), Hafnium (Hf), Cadmium (Cd), Bismuth (Bi), Antimony (Sb), or Tellurium (Te); and
a capping layer formed on the multi-layer stack, the capping layer comprising at least one material selected from the group consisting of titanium nitride, boron carbide, and silicon carbide.
10. The extreme ultraviolet (EUV) mask blank of claim 9 , further comprising an additional multi-layer stack formed between the ultra-low expansion substrate and the absorber layer.
11. The extreme ultraviolet (EUV) mask blank of claim 9 , further comprising an additional multi-layer stack formed directly on a planarization layer and the multi-layer stack formed on the additional multi-layer stack.
12. The extreme ultraviolet (EUV) mask blank of claim 9 , wherein the absorber layer includes a single layer of Tin (Sn).
13. The extreme ultraviolet (EUV) mask blank of claim 9 , wherein the absorber layer includes a single layer of Lead (Pb).
14. The extreme ultraviolet (EUV) mask blank of claim 9 , wherein the absorber layer includes a single layer of Bismuth (Bi), Antimony (Sb), or Tellurium (Te).
15. The extreme ultraviolet (EUV) mask blank of claim 9 , wherein the absorber layer is in a range of 10 nm to 83 nm thick.