Shielded semiconductor package with open terminal and methods of making
A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a surface of the substrate;
depositing an encapsulant over the electrical component and substrate, wherein a portion of the surface of the substrate remains exposed from the encapsulant;
forming a shielding layer over the encapsulant; and
removing a portion of the shielding layer to expose the portion of the surface of the substrate.
2. The method of claim 1 , further including removing the portion of the shielding layer using laser ablation.
3. The method of claim 1 , further including:
disposing a mask over the portion of the surface of the substrate; and
removing the portion of the shielding layer by removing the mask.
4. The method of claim 1 , further including disposing the substrate over a jig with a tab of the jig over the portion of the surface of the substrate.
5. The method of claim 4 , further including disposing an insulating layer on the tab of the jig and disposing the portion of the surface of the substrate on the insulating layer.
6. The method of claim 1 , wherein the portion of the surface of the substrate includes a terminal or socket.
7. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over a surface of the substrate;
depositing an encapsulant over the electrical component and substrate, wherein a portion of the surface of the substrate remains exposed from the encapsulant;
disposing the substrate over a jig with a tab of the jig over the portion of the surface of the substrate;
forming a shielding layer over the encapsulant while the tab of the jig remains over the portion of the surface of the substrate; and
removing the jig to expose the portion of the surface of the substrate.
8. The method of claim 7 , further including:
disposing an insulating layer on the tab of the jig; and
disposing the portion of the surface of the substrate in physical contact with the insulating layer.
9. The method of claim 8 , wherein the insulating layer covers an entire surface of the jig.
10. The method of claim 8 , wherein the insulating layer is a polyimide layer.
11. The method of claim 7 , wherein the portion of the surface of the substrate includes a terminal or socket.
12. The method of claim 7 , wherein the portion of the surface of the substrate includes a contact pad.
13. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over the substrate;
depositing an encapsulant over the electrical component and substrate, wherein a portion of the substrate remains exposed from the encapsulant;
forming a shielding layer over the encapsulant; and
removing a portion of the shielding layer to expose the portion of the substrate.
14. The method of claim 13 , further including removing the portion of the shielding layer using laser ablation.
15. The method of claim 13 , further including:
disposing a mask over the portion of the substrate; and
removing the portion of the shielding layer by removing the mask.
16. The method of claim 13 , further including disposing the substrate over a jig with a tab of the jig over the portion of the substrate.
17. The method of claim 16 , further including:
disposing an insulating layer on the tab of the jig; and
disposing the portion of the substrate on the insulating layer.
18. The method of claim 13 , wherein the portion of the substrate includes a terminal or socket.
19. The method of claim 13 , wherein the portion of the substrate includes a contact pad.