Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
1. A spin-orbit-torque magnetization rotational element comprising:
a spin-orbit torque wiring layer which extends in an X direction and comprises nonmagnetic material; and
a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer,
wherein:
the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and
an easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on the plane in which the spin-orbit torque wiring layer extends.
2. The spin-orbit-torque magnetization rotational element according to claim 1 ,
wherein the first ferromagnetic layer is an HoCo alloy, an SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.
3. A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 1 ;
a second ferromagnetic layer which is disposed on a side of the first ferromagnetic layer opposite to a side with the spin-orbit torque wiring layer, a magnetization direction of the second ferromagnetic layer being fixed; and
a nonmagnetic layer which is disposed between the first ferromagnetic layer, and the second ferromagnetic layer.
4. A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 2 ;
a second ferromagnetic layer which is disposed on a side of the first ferromagnetic layer opposite to a side with the spin-orbit torque wiring layer, a magnetization direction of the second ferromagnetic layer being fixed; and
a nonmagnetic layer which is disposed between the first ferromagnetic layer, and the second ferromagnetic layer.
5. The spin-orbit-torque magnetoresistance effect element according to claim 3 , further comprising:
a third ferromagnetic layer which is disposed between the first ferromagnetic layer, and the nonmagnetic layer.
6. The spin-orbit-torque magnetoresistance effect element according to claim 4 , further comprising:
a third ferromagnetic layer which is disposed between the first ferromagnetic layer, and the nonmagnetic layer.
7. The spin-orbit-torque magnetoresistance effect element according to claim 3 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.
8. The spin-orbit-torque magnetoresistance effect element according to claim 4 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.
9. The spin-orbit-torque magnetoresistance effect element according to claim 5 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.
10. The spin-orbit-torque magnetoresistance effect element according to claim 6 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.
11. The spin-orbit-torque magnetoresistance effect element according to claim 7 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.
12. The spin-orbit-torque magnetoresistance effect element according to claim 8 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.
13. The spin-orbit-torque magnetoresistance effect element according to claim 9 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.
14. The spin-orbit-torque magnetoresistance effect element according to claim 10 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.
15. The spin-orbit-torque magnetoresistance effect element according to claim 7 ,
wherein the diffusion prevention layer has a thickness of twice or less an ionic radius of an element constituting the diffusion prevention layer.
16. A method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 1 , comprising:
forming the spin-orbit torque wiring layer with the nonmagnetic material; and
forming at least the first ferromagnetic layer on the spin-orbit torque wiring layer while applying a magnetic field in a direction including the X direction.
17. The method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 16 , further comprising:
annealing the first ferromagnetic layer while applying a magnetic field thereto in directions including the X direction after forming at least the first ferromagnetic layer.
18. A method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 1 , comprising:
forming the spin-orbit torque wiring layer with the nonmagnetic material; and
annealing the first ferromagnetic layer on the spin-orbit torque wiring layer while applying a magnetic field in a direction including the X direction after forming at least the first ferromagnetic layer.
19. The spin-orbit-torque magnetoresistance effect element according to claim 7 ,
wherein the diffusion prevention layer has a thickness of twice or less an ionic radius of an element constituting the diffusion prevention layer.
20. A spin-orbit-torque magnetoresistance effect element comprising:
a spin-orbit-torque magnetization rotational element comprising:
a spin-orbit torque wiring layer which extends in an X direction; and
a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer;
a second ferromagnetic layer which is disposed on a side of the first ferromagnetic layer opposite to a side with the spin-orbit torque wiring layer, a magnetization direction of the second ferromagnetic layer being fixed;
a nonmagnetic layer which is disposed between the first ferromagnetic layer, and the second ferromagnetic layer; and
a third ferromagnetic layer which is disposed between the first ferromagnetic layer and the nonmagnetic layer,
wherein:
the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends,
an easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on the plane in which the spin-orbit torque wiring layer extends, and
the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.