Image sensing device and manufacturing method thereof

1. A method of manufacturing a back side illuminated (BSI) image sensor, comprising:

receiving a semiconductive substrate;

forming a dielectric layer on a front side of the semiconductive substrate;

forming a recess in the dielectric layer such to expose the front side;

forming a titanium layer inside the recess and on the front side of the semiconductive substrate by using a plasma ignition power in a predetermined range from about 600 watts to 900 watts;

forming a barrier layer inside the recess;

filling the recess by a conductive material;

after the filling, performing a first thermal anneal to cause a portion of the titanium layer to react with the semiconductive substrate to form a silicide layer; and

performing a second thermal anneal after the first thermal anneal.

2. The method of claim 1 , wherein the forming the titanium layer comprises using a first plasma power maintained substantially constant at a first predetermined range lesser than half of the predetermined range.

3. The method of claim 2 , wherein the forming the titanium layer comprises using a second plasma power maintained substantially constant at a second predetermined range proximately double the first predetermined range but lower than the predetermined range.

4. The method of claim 1 , wherein the performing the second thermal anneal comprises forming a silicide layer comprising a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.

5. The method of claim 1 , further comprising filling the recess by a conductive material.

6. The method of claim 1 , wherein the performing the second thermal anneal comprises forming a silicide layer comprising a lattice structure, and the lattice structure comprising a { 220 } plane or a { 311 } plane configured to be measured with peaks on an X-ray diffraction pattern of the lattice structure.

7. A method of manufacturing a back side illuminated (BSI) image sensor, comprising:

receiving a semiconductive substrate;

forming a dielectric layer on a front side of the semiconductive substrate;

forming a recess in the dielectric layer to expose the front side;

forming a titanium layer inside the recess and on the front side of the semiconductive substrate by using a plasma ignition power in a predetermined range; and

performing a thermal anneal to form a silicide layer comprising a lattice structure, and the lattice structure comprising a { 220 } plane configured to be measured with peaks on an X-ray diffraction pattern of the lattice structure.

8. The method of claim 7 , wherein the receiving the semiconductive substrate comprises receiving the semiconductive substrate including a non-silicide portion.

9. The method of claim 7 , wherein the forming the titanium layer comprises using a first plasma power maintained substantially constant at a first predetermined range lesser than half of the predetermined range.

10. The method of claim 8 , wherein the forming the titanium layer comprises using a second plasma power maintained substantially constant at a second predetermined range proximately double the first predetermined range but lower than the predetermined range.

11. The method of claim 8 , wherein the performing the thermal anneal comprises causing the titanium layer in a bottom portion of the recess to react with the non-silicide portion in the semiconductive substrate to form a silicide layer.

12. The method of claim 7 , wherein the performing the thermal anneal comprises forming a silicide layer comprising a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.

13. The method of claim 7 , further comprising forming a barrier layer inside the recess.

14. A method of manufacturing a back side illuminated (BSI) image sensor, comprising:

receiving a semiconductive substrate including a non-silicide portion;

forming a dielectric layer on a front side of the semiconductive substrate;

forming a recess in the dielectric layer to expose the front side;

forming a titanium layer inside the recess and on the front side of the semiconductive substrate by using a plasma ignition power in a predetermined range;

forming a barrier layer inside the recess;

filling the recess by a conductive material;

after the filling, performing a first thermal anneal to cause the titanium layer in a bottom portion of the recess to react with the non-silicide portion in the semiconductive substrate to form a silicide layer having a crystallographic structure of C49; and

after the first thermal anneal, performing a second thermal anneal to change the crystallographic structure of the silicide layer from C49 to C54.

15. The method of claim 14 , wherein the forming the titanium layer comprises using a first plasma power maintained substantially constant at a first predetermined range lesser than half of the predetermined range.

16. The method of claim 15 , wherein the forming the titanium layer comprises using a second plasma power maintained substantially constant at a second predetermined range proximately double the first predetermined range but lower than the predetermined range.

17. The method of claim 14 , wherein the performing the second thermal anneal comprises forming the silicide layer comprising a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.

18. The method of claim 14 , further comprising filling the recess by a conductive material.

19. The method of claim 14 , wherein the performing the second thermal anneal comprises forming the silicide layer having a lattice structure, including a {220} plane configured to be measured with a peak on an X-ray diffraction pattern of the lattice structure.

20. The method of claim 14 , wherein the performing the second thermal anneal comprises forming the silicide layer having a lattice structure, including a {311} plane configured to be measured with a peak on an X-ray diffraction pattern of the lattice structure.