OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

1 - 19 . (canceled)

20 . An optoelectronic component comprising:

a housing having a cavity and a bottom,

an optoelectronic semiconductor chip arranged on the bottom in the cavity, and

a potting body arranged in the cavity,

wherein a first region of the potting body has a higher content of filler than a second region of the potting body, and

the first region of the potting body adjoins the bottom of the cavity.

21 . The optoelectronic component according to claim 20 , wherein the potting body comprises an epoxy.

22 . The optoelectronic component according to claim 20 , wherein the housing comprises a polyphthalamide.

23 . The optoelectronic component according to claim 20 ,

wherein the housing comprises an embedded leadframe, and

the optoelectronic semiconductor chip is arranged on a portion of the leadframe exposed at the bottom of the cavity.

24 . The optoelectronic component according to claim 20 , wherein the filler comprises SiO 2 .

25 . The optoelectronic component according to claim 20 , wherein the optoelectronic semiconductor chip is completely embedded in the first region of the potting body.

26 . The optoelectronic component according to claim 20 , wherein the optoelectronic semiconductor chip is embedded in the first region of the potting body such that an upper side of the optoelectronic semiconductor chip is not arranged in the first region of the potting body.

27 . The optoelectronic component according to claim 20 , wherein the first region of the potting body has embedded carbon black particles or particles comprising TiO 2 .

28 . The optoelectronic component according to claim 20 , wherein the first region of the potting body has a content of filler of 20 percent by weight to 60 percent by weight.

29 . The optoelectronic component according to claim 20 , wherein the second region of the potting body has a content of filler of 0 percent by weight to 20 percent by weight.

30 . The optoelectronic component according to claim 20 , wherein a coefficient of thermal expansion of the first region of the potting body differs from a coefficient of thermal expansion of the second region of the potting body.

31 . The optoelectronic component according to claim 30 , wherein the coefficient of thermal expansion of the first region of the potting body lies closer to a coefficient of thermal expansion of the housing than the coefficient of thermal expansion of the second region of the potting body.

32 . A method of producing an optoelectronic component comprising:

providing a housing having a cavity and a bottom;

arranging an optoelectronic semiconductor chip on the bottom in the cavity; and

forming a potting body having a higher content of filler in a first region than in a second region, in the cavity, wherein the first region of the potting body adjoins the bottom of the cavity.

33 . The method according to claim 32 , wherein forming the potting body comprises:

arranging a first potting material in the cavity to form the first region of the potting body; and

arranging a second potting material in the cavity to form the second region of the potting body.

34 . The method according to claim 33 , wherein arranging the first potting material is performed by a first needle dispensing process.

35 . The method according to claim 33 , wherein arranging the first potting material is performed by jetting.

36 . The method according to claim 33 , wherein arranging the second potting material is performed by a second needle dispensing process.

37 . The method according to claim 33 , wherein the first region of the potting body is cured before arranging the second potting material.

38 . The method according to claim 32 , wherein forming the potting body comprises:

arranging a potting material in the cavity; and

allowing filler contained in the potting material to sink to the bottom of the cavity.