OPTOELECTRONIC SEMICONDUCTOR STAMP AND MANUFACTURING METHOD THEREOF, AND OPTOELECTRONIC SEMICONDUCTOR
An optoelectronic semiconductor stamp and a manufacturing method thereof, and an optoelectronic semiconductor device are disclosed. The manufacturing method comprises the following steps: pressing an optoelectronic semiconductor substrate to an UV tape, wherein the electrodes of a plurality of optoelectronic semiconductor components are adhered to the UV tape; removing the epitaxial substrate, wherein at least a part of the optoelectronic semiconductor components are adhered to the UV tape; decreasing adhesion of at least a part of the UV tape; and picking up at least a part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion by a heat conductive substrate, wherein the part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion is removed from the UV tape so as to obtain an optoelectronic semiconductor stamp.
1 . A manufacturing method of an optoelectronic semiconductor stamp, comprising steps of:
providing an optoelectronic semiconductor substrate, wherein the optoelectronic semiconductor substrate comprises a plurality of optoelectronic semiconductor components separately disposed on an epitaxial substrate, and each of the optoelectronic semiconductor components comprises at least an electrode;
pressing the optoelectronic semiconductor substrate to an UV tape, wherein the electrodes of the optoelectronic semiconductor components are adhered to the UV tape;
removing the epitaxial substrate, wherein at least a part of the optoelectronic semiconductor components are adhered to the UV tape;
decreasing adhesion of at least a part of the UV tape; and
picking up at least a part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion by a heat conductive substrate, wherein the part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion is removed from the UV tape so as to obtain the optoelectronic semiconductor stamp, the heat conductive substrate comprises a buffer layer disposed on a heat conductive base, and the buffer layer adheres the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion.
2 . The manufacturing method according to claim 1 , before the step of removing the epitaxial substrate, further comprising:
providing a light to irradiate a connection junction between the epitaxial substrate and at least a part of the optoelectronic semiconductor components.
3 . The manufacturing method according to claim 1 , wherein the step of removing the epitaxial substrate is to remove the epitaxial substrate by an etching process or a polishing process.
4 . The manufacturing method according to claim 1 , wherein a first pitch is defined between adjacent two of the optoelectronic semiconductor components on the optoelectronic semiconductor substrate, a second pitch is defined between adjacent two of optoelectronic semiconductor components of the optoelectronic semiconductor stamp, and the second pitch is greater than or equal to the first pitch.
5 . The manufacturing method according to claim 4 , wherein the second pitch is n times of the first pitch, and n is an integer greater than or equal to 1.
6 . An optoelectronic semiconductor stamp, comprising:
a heat conductive substrate comprising a heat conductive base and a buffer layer, wherein the buffer layer is disposed on the heat conductive base; and
a plurality of optoelectronic semiconductor components adhered to the heat conductive base through the buffer layer, wherein the optoelectronic semiconductor components are separately disposed on the heat conductive substrate;
wherein the optoelectronic semiconductor stamp is formed by transferring at least a part of optoelectronic semiconductor components from an optoelectronic semiconductor substrate to the heat conductive substrate.
7 . The optoelectronic semiconductor stamp according to claim 6 , wherein a first pitch is defined between adjacent two of the optoelectronic semiconductor components on the optoelectronic semiconductor substrate, a second pitch is defined between adjacent two of optoelectronic semiconductor components of the optoelectronic semiconductor stamp, and the second pitch is greater than or equal to the first pitch.
8 . The optoelectronic semiconductor stamp according to claim 7 , wherein the second pitch is n times of the first pitch, and n is an integer greater than or equal to 1.
9 . The optoelectronic semiconductor stamp according to claim 6 , wherein the optoelectronic semiconductor components on the heat conductive substrate are arranged in a polygon.
10 . An optoelectronic semiconductor device, comprising:
a target substrate having a plurality of electrical conductive portions; and
a plurality of optoelectronic semiconductor components comprising a plurality of electrodes, wherein the electrodes are disposed corresponding to and electrically connected to the electrical conductive portions;
wherein the optoelectronic semiconductor device is formed by transferring the optoelectronic semiconductor stamp of claim 6 to the target substrate.
11 . The optoelectronic semiconductor device according to claim 10 , wherein after the optoelectronic semiconductor stamp is pressed on the target substrate, the heat conductive base is heated to electrically connect the electrodes of the optoelectronic semiconductor components and the corresponding electrical conductive portions by eutectic bonding, and then the heat conductive substrate is removed.
12 . The optoelectronic semiconductor device according to claim 10 , wherein after the optoelectronic semiconductor stamp is pressed on the target substrate, the electrodes of the optoelectronic semiconductor components are electrically connected with the corresponding electrical conductive portions by anisotropic conductive film (ACF), and then the heat conductive substrate is removed.
13 . The optoelectronic semiconductor device according to claim 10 , wherein after the optoelectronic semiconductor stamp is pressed on the target substrate, the heat conductive substrate is removed, and then the electrodes of the optoelectronic semiconductor components are electrically connected with the corresponding electrical conductive portions by eutectic bonding.
14 . The optoelectronic semiconductor device according to claim 10 , wherein after the optoelectronic semiconductor stamp is pressed on the target substrate, the heat conductive substrate is removed, and then the electrodes of the optoelectronic semiconductor components are electrically connected with the corresponding electrical conductive portions by anisotropic conductive film (ACF).
15 . The optoelectronic semiconductor device according to claim 10 , wherein the optoelectronic semiconductor components on the heat conductive substrate of the optoelectronic semiconductor stamp are arranged in a polygon.
16 . The optoelectronic semiconductor device according to claim 10 , wherein the optoelectronic semiconductor device is a LED display device, a light sensing device, or a laser array.