Method of processing SiC single crystal and method of manufacturing SiC ingot
A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.
1. A method of processing a SiC single crystal, comprising:
a measuring step of measuring a shape of an atomic arrangement plane of a SiC single crystal having a first plane and a second plane along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and
a surface processing step of processing the first plane serving as an attachment plane of the SiC single crystal,
wherein the surface processing step includes a grinding step of grinding the first plane, and
wherein in the grinding step, a difference is given to a surface state between the first plane and the second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.
2. The method of processing a SiC single crystal according to claim 1 ,
wherein in the grinding step, in a case where the shape of the atomic arrangement plane is a saddle type, the first plane is ground along a direction in which an amount of curvature of the atomic arrangement plane is small, and
wherein in a case where the shape of the atomic arrangement plane is a bowl type, the first plane is concentrically ground.
3. The method of processing a SiC single crystal according to claim 1 ,
wherein the surface processing step includes a warp amount adjusting step of adjusting a warp amount of the SiC single crystal, and
wherein in the warp amount adjusting step, a thickness of the SiC single crystal is set, to adjust the warp amount of the SiC single crystal.
4. The method of processing a SiC single crystal according to claim 2 ,
wherein the surface processing step includes a warp amount adjusting step of adjusting a warp amount of the SiC single crystal, and
wherein in the warp amount adjusting step, a thickness of the SiC single crystal is set, to adjust the warp amount of the SiC single crystal.
5. The method of processing a SiC single crystal according to claim 1 ,
wherein the surface processing step includes a warp amount adjusting step of adjusting a warp amount of the SiC single crystal, and
wherein in the warp amount adjusting step, a grit number used for grinding of SiC single crystal is selected, to adjust the warp amount of the SiC single crystal.
6. The method of processing a SiC single crystal according to claim 2 ,
wherein the surface processing step includes a warp amount adjusting step of adjusting a warp amount of the SiC single crystal, and
wherein in the warp amount adjusting step, a grit number used for grinding of SiC single crystal is selected, to adjust the warp amount of the SiC single crystal.
7. The method of processing a SiC single crystal according to claim 3 ,
wherein the surface processing step includes a warp amount adjusting step of adjusting a warp amount of the SiC single crystal, and
wherein in the warp amount adjusting step, a grit number used for grinding of SiC single crystal is selected, to adjust the warp amount of the SiC single crystal.
8. The method of processing a SiC single crystal according to claim 1 ,
wherein a radius of curvature of the atomic arrangement plane of the SiC single crystal processed in the surface processing step is 28 m or more, or a maximum value of an amount of curvature is 100 μm or less.
9. The method of processing a SiC single crystal according to claim 2 ,
wherein a radius of curvature of the atomic arrangement plane of the SiC single crystal processed in the surface processing step is 28 m or more, or a maximum value of the amount of the curvature is 100 μm or less.
10. The method of processing a SiC single crystal according to claim 3 ,
wherein a radius of curvature of the atomic arrangement plane of the SiC single crystal processed in the surface processing step is 28 m or more, or a maximum value of an amount of curvature is 100 μm or less.
11. The method of processing a SiC single crystal according to claim 4 ,
wherein a radius of curvature of the atomic arrangement plane of the SiC single crystal processed in the surface processing step is 28 m or more, or a maximum value of an amount of curvature is 100 μm or less.
12. A method of manufacturing a SiC ingot using a SiC single crystal processed by the method of processing a SiC single crystal according to claim 1 as a seed crystal, the method comprising:
a step of attaching the first plane of the SiC single crystal as an attachment plane to a pedestal; and
a crystal growth step of performing crystal growth on the SiC single crystal attached to the pedestal as the seed crystal.
13. A method of manufacturing a SiC ingot using a SiC single crystal processed by the method of processing a SiC single crystal according to claim 2 as a seed crystal, the method comprising:
a step of attaching the first plane of the SiC single crystal as an attachment plane to a pedestal; and
a crystal growth step of performing crystal growth on the SiC single crystal attached to the pedestal as the seed crystal.
14. A method of manufacturing a SiC ingot using a SiC single crystal processed by the method of processing a SiC single crystal according to claim 3 as a seed crystal, the method comprising:
a step of attaching the first plane as an attachment plane of the SiC single crystal to a pedestal; and
a crystal growth step of performing crystal growth on the SiC single crystal attached to the pedestal as the seed crystal.
15. A method of manufacturing a SiC ingot using a SiC single crystal processed by the method of processing a SiC single crystal according to claim 4 as a seed crystal, the method comprising:
a step of attaching the first plane as an attachment plane of the SiC single crystal to a pedestal; and
a crystal growth step of performing crystal growth on the SiC single crystal attached to the pedestal as the seed crystal.
16. A method of manufacturing a SiC ingot using a SiC single crystal processed by the method of processing a SiC single crystal according to claim 5 as a seed crystal, the method comprising:
a step of attaching the first plane of the SiC single crystal to a pedestal as an attachment plane; and
a crystal growth step of performing crystal growth on the SiC single crystal attached to the pedestal as the seed crystal.
17. The method of manufacturing a SiC ingot according to claim 12 ,
wherein a difference in a coefficient of thermal expansion between the pedestal and the SiC single crystal at a crystal growth temperature is 0.3×10 −6 /° C. or less.
18. The method of manufacturing a SiC ingot according to claim 13 ,
wherein a difference in a coefficient of thermal expansion between the pedestal and the SiC single crystal at a crystal growth temperature is 0.3×10 −6 /° C. or less.
19. The method of manufacturing a SiC ingot according to claim 14 ,
wherein a difference in a coefficient of thermal expansion between the pedestal and the SiC single crystal at a crystal growth temperature is 0.3×10 −6 /° C. or less.
20. The method of manufacturing a SiC ingot according to claim 15 ,
wherein a difference in a coefficient of thermal expansion between the pedestal and the SiC single crystal at a crystal growth temperature is 0.3×10 −6 /° C. or less.