Optoelectronic semiconductor device

1. An optoelectronic semiconductor device comprising

a semiconductor layer sequence having an active zone that generates radiation,

a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence and is configured such that emission of the radiation occurs at a top side of the semiconductor layer sequence and not at the bottom side, and

a second electrode that supplies current and extends from the bottom side to the top side opposite the bottom side,

wherein the first electrode is electrically insulated from the second electrode,

the second electrode comprises at least one current distribution structure on the top side,

the current distribution structure is 1) impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions, 2) a metallic structure with a thickness of 1 μm to 10 μm, and 3) arranged at the top of the semiconductor layer sequence only in regions,

the second electrode comprises as a further component a plurality of vias through the first electrode and through the semiconductor layer sequence,

the vias, viewed in plan view of the top side, are surrounded all around by a material of the semiconductor layer sequence and electrically directly connect to the at least one current distribution structure in the contact regions,

the vias, viewed in cross section, narrow from the bottom side as well as from the top side towards a center of the semiconductor layer sequence, and

the vias are hollow directly at the bottom side and at the top side and are closed in the center.

2. A light-emitting diode comprising the optoelectronic semiconductor device according to claim 1 , wherein

the semiconductor layer sequence is based on the material system AlGaInAsP,

the first electrode is a mirror, and

the second electrode comprises a flat current spreading layer on a side remote from the semiconductor layer sequence.

3. The optoelectronic semiconductor device according to claim 1 , wherein a plurality or all of said vias directly electrically connect to each other by the current distribution structure or by the current distribution structures.

4. The optoelectronic semiconductor device according to claim 3 , comprising exactly one current distribution structure,

wherein the current distribution structure electrically connects the vias to one another in a rectangular or hexagonal grid when viewed in plan view.

5. The optoelectronic semiconductor device according to claim 1 , wherein each of the vias is associated with its own current distribution structure.

6. The optoelectronic semiconductor device according to claim 1 , wherein

the vias, seen in plan view, each have an average diameter of at least 0.5 μm and of at most 8 μm, and

an average distance between adjacent vias is 15 μm to 200 μm.

7. The optoelectronic semiconductor device according to claim 1 , wherein the vias are completely covered by the at least one current distribution structure or lie completely within said at least one current distribution structure as seen in plan view of the top side.

8. The optoelectronic semiconductor device according to claim 1 , wherein a maximum distance between adjacent contact regions and/or between adjacent current distribution structures is at most 100 μm so that no point at the top side of the semiconductor layer sequence is more than 50 μm apart from the at least one current distribution structure.