Protecting a substrate region during fabrication of a FET sensor
Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.
1. A method for forming a field-effect transistor sensor, the method comprising:
providing a substrate having a substrate region comprising a gate dielectric,
providing a sacrificial element over the substrate region,
providing one or more layers having a combined thickness perpendicular to the substrate of at least 100 nm over the sacrificial element,
opening an access to the sacrificial element through the one or more layers, wherein the sacrificial element extends beyond the access in a direction that is parallel to the substrate, and
removing the sacrificial element, thereby opening a sensor cavity over the substrate region, wherein removing the sacrificial element comprises removing the sacrificial element via oxidative removal, wherein the sacrificial element comprises a carbon-based material and wherein the oxidative removal comprises an oxygen-based plasma etching.
2. The method according to claim 1 , wherein the sensor cavity has its smallest lateral dimension measuring at most 100 nm, and wherein the access has a dimension, in the direction of the smallest lateral dimension of the sensor cavity, larger than the smallest lateral dimension of the sensor cavity.
3. The method according to claim 1 , wherein removing the sacrificial element comprises selectively removing the sacrificial element with respect to an exposed material comprising Al, Al 2 O 3 , Ti, or Ti x O y .
4. The method of claim 1 , wherein the oxidative removal comprises contacting the sacrificial element with a peroxide solution.
5. The method according to claim 1 , wherein opening the access comprises using a mask that is removable via removal of the sacrificial element.
6. The method of claim 1 , wherein the substrate region comprises a nanocavity.
7. The method according to claim 1 , wherein the sacrificial element comprises a metal.
8. The method according to claim 7 , wherein the metal comprises one or more of TiN, W, or TaN.
9. The method according to claim 1 , wherein the one or more layers have a combined thickness of at least 500 nm.
10. The method according to claim 1 , wherein the one or more layers have a combined thickness of at least 1 μm.
11. The method according to claim 1 , further comprising:
providing a further sacrificial element over the sacrificial element, and
removing the further sacrificial element.
12. The method according to claim 11 , further comprising forming a fluidic channel by removing the further sacrificial element.
13. A field-effect transistor (FET) obtained by a method comprising:
providing a substrate having a substrate region comprising a gate dielectric,
providing a sacrificial element over the substrate region,
providing one or more layers having a combined thickness perpendicular to the substrate of at least 100 nm over the sacrificial element,
opening an access to the sacrificial element through the one or more layers, wherein the sacrificial element extends beyond the access in a direction that is parallel to the substrate, and
removing the sacrificial element, thereby opening a sensor cavity over the substrate region, wherein removing the sacrificial element comprises removing the sacrificial element via oxidative removal, wherein the sacrificial element comprises a carbon-based material and wherein the oxidative removal comprises an oxygen-based plasma etching.
14. The FET according to claim 13 , wherein the sacrificial element further comprises a metal.
15. The FET according to claim 13 , further comprising an exposed material comprising one or more of Al, Al 2 O 3 , Ti or Ti x O y , and wherein the sacrificial element is selectively removable by oxidation with respect to the exposed material.
16. The FET according to claim 13 , further comprising a fluidic channel, the fluidic channel being filled with a further sacrificial element.