Leadless semiconductor packages, leadframes therefor, and methods of making
A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.
1. A method of making a semiconductor device, comprising:
providing at least four semiconductor die;
providing a plurality of contacts adjacent to each of the at least four semiconductor die;
providing at least four tie bars adjacent to each of the at least four semiconductor die;
depositing an encapsulant over the at least four semiconductor die and the plurality of contacts; and
forming at least four trenches in a first surface of the encapsulant laterally adjacent to the plurality of contacts for a full vertical thickness of the plurality of contacts to expose the plurality of contacts, the at least four trenches extending only partially into a thickness of the encapsulant.
2. The method of claim 1 , further comprising forming a conductive layer over a flank of each of the plurality of contacts for the full vertical thickness of each of the plurality of contacts.
3. The method of claim 2 , further comprising forming the at least four trenches to extend to a second surface of the encapsulant to singulate the at least four semiconductor die into at least four semiconductor packages.
4. The method of claim 1 , further comprising forming a second plurality of trenches in the first surface of the encapsulant between each of the at least four semiconductor die and each of the plurality of contacts.
5. The method of claim 4 , wherein a depth of the second plurality of trenches into the encapsulant is approximately equal to half of a thickness of each of the plurality of contacts.
6. The method of claim 1 , further comprising disposing a die pad under each of the at least four semiconductor die, wherein the at least four tie bars extend from a second surface of the encapsulant to each of the resulting at least four die pads.
7. The method of claim 1 , further comprising forming a bond wire extending from one of the first surface of the encapsulant or a second surface of the encapsulant.
8. The method of claim 1 , wherein a half-etched portion of each of the plurality of contacts is exposed within the at least four trenches.
9. The method of claim 1 , wherein the at least four tie bars extend from a second surface of the encapsulant to each of the plurality of contacts.
10. A method of making a semiconductor device, comprising:
providing at least four semiconductor die;
providing a plurality of contacts adjacent to each of the at least four semiconductor die;
providing at least four tie bars adjacent to each of the at least four semiconductor die;
depositing an encapsulant over the at least four semiconductor die and the plurality of contacts;
forming at least four trenches in a first surface of the encapsulant laterally adjacent to the plurality of contacts for a full vertical thickness of the plurality of contacts to expose the plurality of contacts, the at least four trenches extending only partially into the encapsulant;
disposing a die pad under each of the at least four semiconductor die, wherein the at least four tie bars extend from a second surface of the encapsulant to each of the resulting at least four die pads; and
singulating the at least four semiconductor die into at least four semiconductor devices by extending the at least four trenches to the second surface of the encapsulant.
11. The method of claim 10 , further comprising forming a conductive layer over a flank of each of the plurality of contacts for the full vertical thickness of the contact.
12. The method of claim 10 , further comprising forming a second plurality of trenches in the first surface of the encapsulant between each of the at least four semiconductor die and each of the plurality of contacts.
13. The method of claim 12 , wherein a depth of the second plurality of trenches into the encapsulant is approximately equal to half of a thickness of each of the plurality of contacts.
14. The method of claim 12 , wherein a half-etched portion of each of the plurality of contacts is exposed within each of the second plurality of trenches.
15. The method of claim 10 , further comprising forming a bond wire extending from one of the first surface of the encapsulant or a second surface of the encapsulant.
16. A method of making a semiconductor device, comprising:
providing a semiconductor die;
providing a contact adjacent to the semiconductor die;
providing a tie bar adjacent to the semiconductor die;
depositing an encapsulant over the semiconductor die and the contact;
singulating the contact to expose a flank of the contact; and
forming a trench in a first surface of the encapsulant laterally adjacent to the contact for a full vertical thickness of the contact to expose the contact, the trench extending only partially into a thickness of the encapsulant.
17. The method of claim 16 , further comprising forming a conductive layer over a flank of the contact for the full vertical thickness of the contact.
18. The method of claim 16 , further comprising disposing a die pad under the semiconductor die, wherein the tie bar extends from a second surface of the encapsulant to the die pad.
19. The method of claim 16 , further comprising forming a bond wire extending from one of the first surface of the encapsulant or a second surface of the encapsulant.
20. The method of claim 16 , wherein the tie bar extends from a second surface of the encapsulant to the contact.